DMT10H010LSS-13 Discrete Semiconductor Products |
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Allicdata Part #: | DMT10H010LSS-13DITR-ND |
Manufacturer Part#: |
DMT10H010LSS-13 |
Price: | $ 0.46 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 100V SO-8 |
More Detail: | N-Channel 100V 11.5A (Ta), 29.5A (Tc) 1.4W (Ta) Su... |
DataSheet: | DMT10H010LSS-13 Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.41079 |
Vgs(th) (Max) @ Id: | 2.8V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.4W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3000pF @ 50V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 71nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 9.5 mOhm @ 13A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 11.5A (Ta), 29.5A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The DMT10H010LSS-13 is a high quality single N-channel, enhancement mode, standard gate oxide vertical MOSFET. It is designed for use in a wide range of applications including high power switches, DC-DC converters, motor drive control and switching circuits.
The DMT10H010LSS-13 provides high performance, reliable operation and excellent value for applications requiring controlled switching actions and low on-state resistance. The device consists of a single N-channel MOSFET housed in a standard dual-in-line package. It has a simple three-terminal interface, with the gate connected directly to the source, and the drain connected to the source. It is the perfect choice for switching or regulating the power supply of various loads or equipments.
Application Field
The DMT10H010LSS-13 is suitable for high frequency circuits due to its low input capacitance. It is specifically designed for applications that require logic level voltage control such as in personal computers, CD-ROM drives and other digital devices. It is also suitable for high speed switch control and DC-DC converters. Additionally, it can be used as an on-board DC power switch in laptop computers, PDA\'s and other portable electronic devices.
The DMT10H010LSS-13 is suitable for high voltage switching, motor applications and can be used for high current switching in automotive, industrial and medical applications. Moreover, its low RDS-on value makes it an ideal choice for low loss switching with reduced energy consumption. It is also ideal for driving inductive loads such as in steering control applications.
Working Principle
The working principle of the DMT10H010LSS-13 is based on the operation of the MOSFET. A MOSFET is a three-terminal semiconductor device with a drain, a source and a gate that acts as a current-controlled switch. When an appropriate voltage is applied to the gate, it creates a conductive channel between the source and the drain, thus allowing current to flow. This is the basis for the operation of MOSFETs.
The DMT10H010LSS-13 has a low gate threshold voltage, which means it can be switched on with a small voltage difference between the gate and the source. This feature allows the device to be operated with a very small input signal. Additionally, the low input capacitance makes it suitable for high-frequency applications, as it will not slow down the response of the circuit.
The DMT10H010LSS-13 has a wide range of application areas and can be used as an efficient load switch, motor control, and power driver. It is a versatile device suited to a wide variety of applications, including DC-DC converters, high speed switching and logic level voltage control. The device is particularly well-suited to portable electronics due to its low on-state resistance and low gate threshold voltage.
The specific data is subject to PDF, and the above content is for reference
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