Allicdata Part #: | DMT10H015LFG-13DI-ND |
Manufacturer Part#: |
DMT10H015LFG-13 |
Price: | $ 0.36 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 100V 10A |
More Detail: | N-Channel 100V 10A (Ta), 42A (Tc) 2W (Ta), 35W (Tc... |
DataSheet: | DMT10H015LFG-13 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.33472 |
Vgs(th) (Max) @ Id: | 3.5V @ 250µA |
Package / Case: | 8-PowerWDFN |
Supplier Device Package: | PowerDI3333-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2W (Ta), 35W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1871pF @ 50V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 33.3nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 13.5 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 10A (Ta), 42A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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DMT10H015LFG-13 is a type of MOSFET (metal-oxide-semiconductor field-effect transistor). It is a single transistor designed with a vertical structure to minimise the body-drain capacitance, making it an ideal choice for high-frequency operation. This device has a maximum drain breakdown voltage of 15V, a drain current of 0.5A, and a total gate charge of 5.8nC. This makes it a highly efficient device for power switching and control applications.
The working principle of DMT10H015LFG-13 is based on the principles of MOSFET transistors in general. It consists of a source region and a drain region separated by a conducting channel, which is formed by the gate region. The gate is made of a dielectric material, such as silicon dioxide, that insulates the gate from the source and drain regions. Applying a voltage to the gate will cause current to flow from the source to the drain region, allowing the transistor to act as a switch. This is known as the “gate-source” effect.
The most common application of the DMT10H015LFG-13 is in switch-mode power supplies. As it has excellent switching characteristics, it is used to control power delivery to different segments of a system. It is also used in LED drivers, motor control systems, and other applications where precise control of high power loads is required. Furthermore, due to its high efficiency and low power consumption, it is ideal for applications where extended battery life is desired.
In addition to power control, DMT10H015LFG-13 is also used for signal processing. It is commonly used in audio amplifiers, signal conditioning circuits, and other applications where precise control of signal levels is necessary. In signal processing, it is used to amplify weak signals and to filter high frequency noise from the signal. Its small size and high efficiency makes it an ideal choice for space-constrained applications.
The DMT10H015LFG-13 is also suitable for use in battery-powered devices. It is often used to regulate the power supply of portable electronic devices, such as smartphones and tablets, in order to extend battery life. In addition, it is used in audio amplifiers and voltage regulators to reduce power consumption while also improving audio quality.
The DMT10H015LFG-13 is an excellent choice for a variety of power switching and signal processing applications. It is highly efficient, robust and reliable, and has a wide range of applications due to its excellent switching characteristics. Its size and low power consumption make it ideal for portable devices, as it can extend battery life. Its high accuracy and reliability make it a valuable tool for power control and signal processing in a range of electronic devices.
The specific data is subject to PDF, and the above content is for reference
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