DMT10H015LK3-13 Allicdata Electronics
Allicdata Part #:

DMT10H015LK3-13DITR-ND

Manufacturer Part#:

DMT10H015LK3-13

Price: $ 0.36
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET N-CHANNEL 100V 50A TO252
More Detail: N-Channel 100V 50A (Tc) 2.9W (Ta) Surface Mount TO...
DataSheet: DMT10H015LK3-13 datasheetDMT10H015LK3-13 Datasheet/PDF
Quantity: 1000
2500 +: $ 0.32458
Stock 1000Can Ship Immediately
$ 0.36
Specifications
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252, (D-Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.9W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1871pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 33.3nC @ 10V
Series: Automotive, AEC-Q101
Rds On (Max) @ Id, Vgs: 15 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The DMT10H015LK3-13 is a high-voltage N-Channel MOSFET transistor that operates from voltages as high as 20V. It was specifically designed for applications where a high voltage MOSFET is preferred, such as in high efficiency power supplies, LED lighting, switched-mode power supplies, and uninterruptible power supplies. The device is available in a TO-252 (D-Pak) package and has a die size of approximately 0.15mm². In addition to its high voltage rating, the device has a low drain-source on-resistance (RDS(on)) of 0.7mΩ, which makes it suitable for high-efficiency power supplies.

The DMT10H015LK3-13 is a high voltage N-Channel MOSFET transistor, and as such it is based on a Metal Oxide Semiconductor Field Effect Transistor (MOSFET). A MOSFET is a type of transistor that uses an insulated gate to control the flow of current from the source to the drain. One of the main advantages of a MOSFET is its low power consumption, which is why it is often used in power supplies as well as many other applications.

The DMT10H015LK3-13 MOSFET is made up of an N-channel and a P-channel, with the N-channel having a higher voltage rating than the P-channel. When a voltage is applied to the Gate of the N-channel, it allows current to flow from the Source to the Drain. The amount of current that can flow is determined by the drain-source on-resistance (RDS(on)) of the device, which in the case of the DMT10H015LK3-13 is 0.7mΩ. This makes it suitable for applications where it is important to minimize power consumption.

In addition to its low RDS(on), the DMT10H015LK3-13 also has a very low gate-source and gate-drain capacitance, which is beneficial for applications that require fast switching speeds. The device is also fully AEC-Q101 qualified, which means it is suitable for use in automotive applications. Its small size, low power consumption, and high voltage rating make this MOSFET an excellent choice for a wide variety of applications.

The DMT10H015LK3-13 is an excellent choice for applications where a high voltage MOSFET is needed. It has a low RDS(on), low capacitance values, and a small size. In addition, it is fully AEC-Q101 qualified, which makes it suitable for use in automotive applications. Overall, the DMT10H015LK3-13 is an ideal choice for high efficiency power supplies, LED lighting, switched-mode power supplies, and uninterruptible power supplies.

The specific data is subject to PDF, and the above content is for reference

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