
Allicdata Part #: | DMT10H015LK3-13DITR-ND |
Manufacturer Part#: |
DMT10H015LK3-13 |
Price: | $ 0.36 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CHANNEL 100V 50A TO252 |
More Detail: | N-Channel 100V 50A (Tc) 2.9W (Ta) Surface Mount TO... |
DataSheet: | ![]() |
Quantity: | 1000 |
2500 +: | $ 0.32458 |
Vgs(th) (Max) @ Id: | 3.5V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | TO-252, (D-Pak) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.9W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1871pF @ 50V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 33.3nC @ 10V |
Series: | Automotive, AEC-Q101 |
Rds On (Max) @ Id, Vgs: | 15 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 50A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The DMT10H015LK3-13 is a high-voltage N-Channel MOSFET transistor that operates from voltages as high as 20V. It was specifically designed for applications where a high voltage MOSFET is preferred, such as in high efficiency power supplies, LED lighting, switched-mode power supplies, and uninterruptible power supplies. The device is available in a TO-252 (D-Pak) package and has a die size of approximately 0.15mm². In addition to its high voltage rating, the device has a low drain-source on-resistance (RDS(on)) of 0.7mΩ, which makes it suitable for high-efficiency power supplies.
The DMT10H015LK3-13 is a high voltage N-Channel MOSFET transistor, and as such it is based on a Metal Oxide Semiconductor Field Effect Transistor (MOSFET). A MOSFET is a type of transistor that uses an insulated gate to control the flow of current from the source to the drain. One of the main advantages of a MOSFET is its low power consumption, which is why it is often used in power supplies as well as many other applications.
The DMT10H015LK3-13 MOSFET is made up of an N-channel and a P-channel, with the N-channel having a higher voltage rating than the P-channel. When a voltage is applied to the Gate of the N-channel, it allows current to flow from the Source to the Drain. The amount of current that can flow is determined by the drain-source on-resistance (RDS(on)) of the device, which in the case of the DMT10H015LK3-13 is 0.7mΩ. This makes it suitable for applications where it is important to minimize power consumption.
In addition to its low RDS(on), the DMT10H015LK3-13 also has a very low gate-source and gate-drain capacitance, which is beneficial for applications that require fast switching speeds. The device is also fully AEC-Q101 qualified, which means it is suitable for use in automotive applications. Its small size, low power consumption, and high voltage rating make this MOSFET an excellent choice for a wide variety of applications.
The DMT10H015LK3-13 is an excellent choice for applications where a high voltage MOSFET is needed. It has a low RDS(on), low capacitance values, and a small size. In addition, it is fully AEC-Q101 qualified, which makes it suitable for use in automotive applications. Overall, the DMT10H015LK3-13 is an ideal choice for high efficiency power supplies, LED lighting, switched-mode power supplies, and uninterruptible power supplies.
The specific data is subject to PDF, and the above content is for reference
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