Allicdata Part #: | DRA2113Z0LTR-ND |
Manufacturer Part#: |
DRA2113Z0L |
Price: | $ 0.05 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS PNP 200MW MINI3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | DRA2113Z0L Datasheet/PDF |
Quantity: | 3000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
3000 +: | $ 0.04406 |
6000 +: | $ 0.03965 |
15000 +: | $ 0.03524 |
30000 +: | $ 0.03304 |
75000 +: | $ 0.02937 |
Resistor - Emitter Base (R2): | 10 kOhms |
Base Part Number: | DRA2113 |
Supplier Device Package: | Mini3-G3-B |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Mounting Type: | Surface Mount |
Power - Max: | 200mW |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 500µA, 10mA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 5mA, 10V |
Series: | -- |
Resistor - Base (R1): | 1 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | PNP - Pre-Biased |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The DRA2113Z0L pre-biased single transistor is one of the leading devices of its type. Its highly efficient design has made it an essential element for a wide array of applications. Here we discuss the DRA2113Z0L’s potential application fields, its working principle, advantages, and how to use it properly.
Application Fields
The DRA2113Z0L has found use in a variety of applications. It has been used as a driver transistor in power amplifiers, a current source in class-D audio amplifiers, a buffer in interface circuits, and a power switch in voltage regulator circuits. Its versatile design makes it suitable for many other applications, including radio frequency amplifiers and oscillators, current source circuits, power supply circuits, power switching applications, and linear amplifier circuits.
Working Principle
The DRA2113Z0L is a pre-biased single transistor based on the bipolar junction transistor (BJT) technology. The device is based on a Darlington configuration, where two transistors are connected in series between two current terminals (collector and emitter). When a voltage is applied to the base terminal, the transistors form a closed loop, allowing current to flow from the collector to the emitter. This current flow is then amplified by the device and can be used to power application circuits.
Advantages
The advantages of using the DRA2113Z0L in applications are numerous. Firstly, the device is designed to be highly efficient, allowing it to deliver more power with less heat. Furthermore, the device is very reliable, with a maximum operating temperature range of -55°C to +125°C. Additionally, it is easy to use and has a wide range of voltage (1.8V – 6V) and current (100mA max) ratings, so it can be used in a variety of circumstances. Finally, the DRA2113Z0L has a fast switching speed, so it can respond quickly to signals from the application circuits, enabling precise control over current flow.
How to Use
It is important to note that the DRA2113Z0L should always be used with caution. When using the device, the voltages must be within the recommended range, and the power dissipation must not exceed the maximum ratings. Furthermore, a heat sink or other heat dissipating measures should be employed to lower the heat generated by the device. It is also important to use proper protection circuits when operating devices at high frequencies, as this can reduce the risk of damage to the device due to excessive current.
Conclusion
The DRA2113Z0L pre-biased single transistor is a highly efficient device that has proven to be essential for a wide array of applications. Its versatile design makes it suitable for use in a variety of situations, and it has a number of advantages over traditional transistors. However, the device must be used with care, and proper heat dissipating measures should always be employed when in use. Understanding its potential application fields, its working principle, advantages, and how to use it properly, can ensure that it is used safely and effectively.
The specific data is subject to PDF, and the above content is for reference
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