DRA2L14Y0L Discrete Semiconductor Products

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The DRA2L14Y0L is a single pre-biased transistor that falls within the category of bipolar transistors. In this unit, two back-to-back substrate-connected p-mos transistors are formed by a \'sandwich\' assembly of a silicon substrate, two n+ implants and two p+ implants. This construction provides a sensing junction between the two transistors, which detect changes in current and emit a voltage. The device has a low-power dissipation of 10 mW, a low-voltage drop of 0.25 V and a high peripheral electrical noise of 20 nV.

This device is particularly suited for use in applications requiring low operating currents. Examples include battery-powered systems, smart cards, remote controls, and embedded devices. Some of its features include low capacitance (1pF), wide range of operating temperatures from -40 to 125°C and wide range of operation voltages from 1.8 to 20 V. Its operational field also includes high input impedance, high current gain, low base-emitter saturation voltage, good integration capability, and large external overload protection.

In terms of its working principle, the DRA2L14Y0L uses a biasing source to inject a small fixed current into the sensing junction. This current produces a voltage across the junction, which is detected by the base of the transistor. A change in the current at the junction is directly proportional to the voltage drop. This voltage is then amplified and fed back to the biasing source via the emitter and collector terminals. Thus, the device can provide the necessary correlation between current flow and voltage with excellent precision.

The pre-biased feature of the transistor is particularly advantageous in applications such as alarms and ignition systems, where a small voltage difference needs to be detected to initiate an action. It also eliminates the need for external circuitry and reduces the overall size and cost of the system. Moreover, its small size, wide operating temperature range, and low power consumption make it attractive for many other applications.

To sum up, the DRA2L14Y0L single pre-biased transistor is a reliable and versatile device. Its low power dissipation, wide range of operating voltages, and high sensitivity make it ideal for a variety of low-current applications. It is also appealing for its robust construction, small size, wide temperature operating range, and pre-biased feature. The transistor\'s working principles are based on the ability to generate a voltage result from a change in current flow at the sensing junction, which is then amplified and fed back to the bias source.

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