DRA2144V0L Discrete Semiconductor Products |
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Allicdata Part #: | DRA2144V0LTR-ND |
Manufacturer Part#: |
DRA2144V0L |
Price: | $ 0.05 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS PNP 200MW MINI3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | DRA2144V0L Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
3000 +: | $ 0.04406 |
6000 +: | $ 0.03965 |
15000 +: | $ 0.03524 |
30000 +: | $ 0.03304 |
75000 +: | $ 0.02937 |
Resistor - Emitter Base (R2): | 10 kOhms |
Base Part Number: | DRA2144 |
Supplier Device Package: | Mini3-G3-B |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Mounting Type: | Surface Mount |
Power - Max: | 200mW |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 500µA, 10mA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 5mA, 10V |
Series: | -- |
Resistor - Base (R1): | 47 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | PNP - Pre-Biased |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The DRA2144V0L is a pre-biased, single-stage bipolar junction transistor (BJT) designed for low voltage and high speed applications. It is most commonly used as a power switch, voltage regulator, and driver for other electronic circuits.
The basic structure of the DRA2144V0L consists of a PNP transistor, which is pre-biased with a voltage of 0.5V on the emitter. This allows the transistor to operate at much lower voltages than other BJTs while providing higher speeds and higher output power.
The working principle of the DRA2144V0L is based on three principles. First, the PNP transistor has its base connected to the emitter, creating a PN junction. This junction allows electric current to pass from the emitter to the collector. The collector carries the current, which is amplified by the transistor.
Second, the N-type material of the collector-base junction of the transistor is connected to the voltage source. This voltage source supplies controllable potential difference (voltage) across the N-type material, allowing the electric current to flow in one direction only. This current is used to switch the base-collector junction, controlling the current flow in the circuit.
Thirdly, the pre-biased voltage supply at the emitter allows the transistor to function at lower voltage and higher speeds. This voltage supply is also used to create the potential difference between the emitter and the base, allowing the transistor to operate without the need for additional voltage sources.
The DRA2144V0L is ideal for low-voltage and high-speed applications. It is frequently used for power switches, voltage regulators, and drivers for other electronic circuits. It provides stable switching, low-voltage operation, and high speed switching performance. It is therefore suitable for applications ranging from automotive, consumer electronics, and industrial to medical, military, and aerospace applications.
The DRA2144V0L can be used with a wide range of components, including MOSFETs, IGBTs, and other general BJT types. It is an important component of today’s ever-evolving technology and has numerous applications in today’s circuitry.
The specific data is subject to PDF, and the above content is for reference
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