Allicdata Part #: | DRA2124E0LTR-ND |
Manufacturer Part#: |
DRA2124E0L |
Price: | $ 0.05 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS PNP 200MW MINI3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | DRA2124E0L Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
3000 +: | $ 0.04406 |
6000 +: | $ 0.03965 |
15000 +: | $ 0.03524 |
30000 +: | $ 0.03304 |
75000 +: | $ 0.02937 |
Resistor - Emitter Base (R2): | 22 kOhms |
Base Part Number: | DRA2124 |
Supplier Device Package: | Mini3-G3-B |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Mounting Type: | Surface Mount |
Power - Max: | 200mW |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 500µA, 10mA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 60 @ 5mA, 10V |
Series: | -- |
Resistor - Base (R1): | 22 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | PNP - Pre-Biased |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
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?DRA2124E0L is an NPN silicon pre-biased general-purpose transistor, usually classified under the transistors - bipolar (BJT) - single, pre-biased category. It typically functions as an amplifier or switch, used in a variety of electronics applications, including power conversion, switching, and audio amplification and control.
The device consists of two transistors and two base electrodes connected in a single unit, creating a three-junction structure. The two transistors, known as NPN and PNP, are connected in series to provide the pre-biased operation. The NPN transistor is the driving force of the device, and the PNP transistor is the collector. This connection allows the current to flow in the forward direction when the bias voltage is applied.
The region where the two transistors overlap is known as the active region, and this is where the current flows. The current flowing in the active region depends on the bias voltage applied; the higher the voltage, the greater the current. The current flow is also affected by the voltage applied across the base terminals and the collector terminal.
The DRA2124E0L is used in many applications where low voltage, low frequency operations are needed. It is ideal for switching low-level signals, and is commonly used in power conversion, switching, and audio amplification and control. It is also used in low-voltage analog, digital, and audio circuits. In addition, it has found its way into consumer electronics, such as control systems for televisions and other consumer-electronic devices.
The working principle of the DRA2124E0L is based on the two transistors providing a current path when the bias voltage is applied. When the bias voltage is applied, the NPN transistor begins to conduct, allowing the current to flow in the forward direction. At the same time, the PNP transistor receives a reverse bias, which reduces its conduction, preventing current from flowing in the reverse direction across the base terminals.
Another important feature of the DRA2124E0L is its pre-biased operation. The pre-biased operation helps reduce the potential for switching delays, especially when operating at low frequencies. Additionally, the independent control of the two transistors allows for greater stability and better control over the current flow.
The DRA2124E0L is a popular choice for a wide variety of applications, from consumer electronics to industrial electronics. Its low voltage, low frequency operation makes it an ideal choice for power conversion, switching, and audio amplification and control. Its reliable performance and pre-biased operation makes it an ideal candidate for many applications.
The specific data is subject to PDF, and the above content is for reference
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