DRA2143X0L Discrete Semiconductor Products |
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Allicdata Part #: | DRA2143X0LTR-ND |
Manufacturer Part#: |
DRA2143X0L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS PNP 200MW MINI3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | DRA2143X0L Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Resistor - Emitter Base (R2): | 10 kOhms |
Base Part Number: | DRA2143 |
Supplier Device Package: | Mini3-G3-B |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Mounting Type: | Surface Mount |
Power - Max: | 200mW |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 500µA, 10mA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 5mA, 10V |
Series: | -- |
Resistor - Base (R1): | 4.7 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | PNP - Pre-Biased |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
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The DRA2143X0L is a single, pre-biased bipolar junction transistor (BJT) that is used for many different applications. Its primary purpose is for use in switching power supplies, DC-to-DC converters, and transistor radio designs. The DRA2143X0L is a popular transistor in the field of high power applications due to its ability to handle large currents and voltages.
A bipolar junction transistor, or BJT, is a type of solid-state electronic device. It has three terminals, the emitter, base and collector, and is composed of two p-n junctions, along with two additional p-type and two additional n-type layers. The basic working principle of the BJT is that the emitter and collector are attached to two different voltage sources in order to create a current flow between them. As the voltage across the base increases, the current flow between the emitter and collector increases.
The DRA2143X0L is a single, pre-biased transistor designed for applications where power must be switched from one location to another. It has a collector-emitter breakdown voltage of 1700V and can handle currents up to 3A. It also has a maximum voltage rating of 65V, making it ideal for applications such as switching power supplies and DC-to-DC converters. The DRA2143X0L is capable of switching both AC and DC loads. Furthermore, it features a flat collector-emitter leakage current curve, providing for a wide range of power switching applications.
The DRA2143X0L is also suitable for transistor radios due to its low power consumption and high performance. The transistor is capable of switching very quickly without generating excessive levels of noise, while still providing a good signal-to-noise ratio. Additionally, the transistor is capable of operating over a wide temperature range without any issues, making it ideal for outdoor applications.
In conclusion, the DRA2143X0L is a single, pre-biased bipolar junction transistor that is suitable for a variety of high power applications, such as power supplies, DC-to-DC converters and transistor radios. Its features make it ideal for applications requiring fast switching and low power consumption, while still providing a good signal-to-noise ratio. Furthermore, the DRA2143X0L is capable of operating over a wide temperature range and is robust enough to handle large voltages and currents.
The specific data is subject to PDF, and the above content is for reference
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