Allicdata Part #: | DRA2124X0LTR-ND |
Manufacturer Part#: |
DRA2124X0L |
Price: | $ 0.05 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS PNP 200MW MINI3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | DRA2124X0L Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
3000 +: | $ 0.04631 |
6000 +: | $ 0.04167 |
15000 +: | $ 0.03704 |
30000 +: | $ 0.03473 |
75000 +: | $ 0.03087 |
Resistor - Emitter Base (R2): | 47 kOhms |
Base Part Number: | DRA2124 |
Supplier Device Package: | Mini3-G3-B |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Mounting Type: | Surface Mount |
Power - Max: | 200mW |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 500µA, 10mA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V |
Series: | -- |
Resistor - Base (R1): | 22 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | PNP - Pre-Biased |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
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The DRA2124X0L is a single, pre-biased bipolar junction transistors (BJT). This type of transistor is composed of two PN junctions formed by two different conductive layers called emitter and collector. The emitter is used to inject carriers or electrons into the base, while the collector is used for the opposite purpose, to extract carriers from the base. The DRA2124X0L is mainly used for applications such as amplifiers, controllers, and motor control systems.
When the base-emitter voltage is increased, the current flow from the emitter to collector increases. This is due to the fact that the holes from the emitter are pushed into the base due to the increased voltage, making it easier for electrons to move from the emitter to the collector. This is also known as forward bias. On the other hand, when the base-emitter voltage is decreased, the current flow from the emitter to collector decreases. This is because the holes from the emitter are repelled by the decreased voltage, preventing electrons from moving from the emitter to the collector. This is also known as reverse bias.
The DRA2124X0L is a single-junction transistor, meaning that it has only one PN junction. This type of transistor is typically pre-biased, meaning that it has an inherent forward or reverse bias. When used in an amplifier circuit, the bias is important to ensure that the device can either amplify or reduce the gain of the output signal. This allows the transistor to act as an amplifier or a switch depending on the application. The DRA2124X0L is also commonly used in motor control systems, where it is used to regulate the current flow to the motor in order to control its speed.
The DRA2124X0L is also used as a variable-gain device, due to its pre-biased architecture and its ability to increase or decrease its current gain with the same input signal. This is achieved by adjusting the base-emitter voltage with an external variable source. This makes it possible to control the amplifier gain without changing the rest of the circuit. It is also used in memory devices, such as EPROMs, where it is used to store data by using voltage to change the state of the transistor.
The DRA2124X0L is a versatile device and is used in many different circuits, from amplifiers to controllers. Its pre-biased architecture, as well as its ability to adjust the current gain with an external voltage source, make it a viable option for many different applications. The device is also relatively simple to use and is widely available, making it a popular choice among engineers.
The specific data is subject to PDF, and the above content is for reference
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