DRA2115E0L Discrete Semiconductor Products |
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Allicdata Part #: | DRA2115E0LTR-ND |
Manufacturer Part#: |
DRA2115E0L |
Price: | $ 0.05 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS PNP 200MW MINI3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | DRA2115E0L Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
3000 +: | $ 0.04631 |
6000 +: | $ 0.04167 |
15000 +: | $ 0.03704 |
30000 +: | $ 0.03473 |
75000 +: | $ 0.03087 |
Resistor - Emitter Base (R2): | 100 kOhms |
Base Part Number: | DRA2115 |
Supplier Device Package: | Mini3-G3-B |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Mounting Type: | Surface Mount |
Power - Max: | 200mW |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 500µA, 10mA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V |
Series: | -- |
Resistor - Base (R1): | 100 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | PNP - Pre-Biased |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
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Introduction
DRA2115E0L is a single, pre-biased, NPN Silicon Bipolar Transistor manufactured by Panasonic, intended for use as a driver in motor controllers, switch-mode power supplies, and cell phones. A motor controller is a device that usually receives a voltage signal from a processor and has a power transistor capable of modulating the power to the motor accurately according to the signal.
Design
The DRA2115E0L is designed to provide superior output current and power performance within the constraints of a single pre-biased package. This design consists of two transistors in one chip, which allows for faster switching times, better noise filtering, and higher voltage breakdowns. The two transistors are also cross-connected to ensure that current will flow from the collector of one transistor to the base of the other, and vice versa. This allows for higher current flow at higher frequencies.
Application Fields
The DRA2115E0L is intended for use in motor controllers, switch-mode power supplies, and cell phones. In motor controllers, it can be used to accurately modulate power to the motor. In switch-mode power supplies, it can be used as a high-speed switch to provide power to the circuit. And in cell phones, it can be used to control power efficiently.
Working principle
The working principle of the DRA2115E0L is based on the principle of bipolar junction transistors. A bipolar transistor is made up of a base, a collector and an emitter. When current flows through the base, it allows the flow of current between the collector and the emitter. This is known as “on” mode, or saturation. When the base current is cut off, this is known as “off” mode, or cutoff. The DRA2115E0L is specifically designed to be used in both modes to ensure accurate control of the power to the motor.
Usage
The DRA2115E0L is used in a wide range of applications, from motor controllers to switch-mode power supplies and cell phones. In each of these applications, it is used to accurately modulate the power to the components. The excellent reliability of the device makes it a popular choice for applications that require high accuracy control.
Conclusion
The DRA2115E0L is a pre-biased, single NPN Silicon Bipolar Transistor designed to provide superior output current and power performance. It is used in motor controllers, switch-mode power supplies, and cell phones to accurately modulate the power to the components. The excellent reliability and performance of the device make it a popular choice in a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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