Allicdata Part #: | DRA2152Z0LTR-ND |
Manufacturer Part#: |
DRA2152Z0L |
Price: | $ 0.05 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS PNP 200MW MINI3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | DRA2152Z0L Datasheet/PDF |
Quantity: | 3000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
3000 +: | $ 0.04406 |
6000 +: | $ 0.03965 |
15000 +: | $ 0.03524 |
30000 +: | $ 0.03304 |
75000 +: | $ 0.02937 |
Resistor - Emitter Base (R2): | 5.1 kOhms |
Base Part Number: | DRA2152 |
Supplier Device Package: | Mini3-G3-B |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Mounting Type: | Surface Mount |
Power - Max: | 200mW |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 500µA, 10mA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 20 @ 5mA, 10V |
Series: | -- |
Resistor - Base (R1): | 510 Ohms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | PNP - Pre-Biased |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
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Transistors - Bipolar (BJT) - Single, Pre-Biased
The DRA2152Z0L is a pre-biased, single bipolar junction transistor (BJT) designed for use in various application fields. This type of transistor is mainly used in audio amplifier circuits, small signal amplifiers, general purpose switching, among others. It consists of an emitter, a base, and a collector. It behaves in a similar fashion to a switch, where electricity flow is controlled by the amount of current that flows through the base lead.
Working Principle
A transistor is a semiconductor device that amplifies current and is composed of three terminals: an emitter, a base, and a collector. The current through the emitter-base junction controls the collector current. This working principle is known as current gain and is represented by the symbol “Beta” (β). A BJT is made of a single layer of doped semiconductor material, usually silicon that is joined by a layer of metal, usually aluminium.
The DRA2152Z0L transistor is designed for use with balanced loads and requires high gain, typically 20µA per mA at an emitter-base voltage of 6V. A pre-biased single transistor usually operates with an on/off ratio higher than six, which helps to improve its reliability.
Application Fields
The DRA2152Z0L is mainly used in audio amplifier circuits and small signal amplifiers. It is also used in general purpose switching applications, such as the control of LED indicators. It is also used in controlled rectifier circuits, power converters, line drivers, and so on. Because of its high gain and small size, it is also widely used in surface mount packages.
Another important application of the DRA2152Z0L is in pre-bias applications, such as complementary symmetrical amplifiers, voltage and current followers, integrator circuits, and oscillators. Pre-bias applications refer to circuits where one of the transistors is already biased when it is turned on. This helps to reduce the switching turn-on time and to minimize the amount of current that flows through the circuit.
The DRA2152Z0L has a very low current gain, making it ideal for low power applications, such as battery powered circuits. Because of its low power usage, it can be easily incorporated into battery powered wearables without draining the battery quickly.
Overall, the DRA2152Z0L is a versatile transistor that can be used in a variety of applications and is suitable for use with balanced loads. It has a wide range of application fields, making it an important component in many circuits.
The specific data is subject to PDF, and the above content is for reference
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