DRA2144T0L

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The DRA2144T0L is a single, pre-biased, bipolar junction (BJT) transistor designed to perform a variety of tasks in a range of applications. The transistor is composed of a single, emitter-base junction and a base-collector junction, both of which are arranged in series.

The transistor is able to operate in a variety of modes, including single-ended and push-pull. It can be used in a multitude of applications, including switching, amplifying, and regulating. In switching applications, the DRA2144T0L enables circuitry to be switched on, off, or operated in a manner that can vary depending on the imputed logic pulse.

In amplifying applications, the DRA2144T0L amplifies weak signals and regenerates digital signals for transmission or subsequent processing. By amplifying signals, it helps to ensure that reliable digital signals can be transmitted or routed over long distances. In regulating applications, the DRA2144T0L adjusts the amplitude or frequency of signals to ensure a consistent output by providing a low on-resistance and low saturation voltage.

In terms of technical specifications, the DRA2144T0L has a maximum operating frequency of 200kHz and a maximum collector current of 448mA. The maximum pulse power rating is 100 W and the maximum power dissipation is 63 W. The maximum junction temperature is 200°C and the minimum storage temperature is -40°C. The transistor also has a maximum collector-emitter breakdown voltage of 60 V and an emitter-collector breakdown voltage of 6 V.

The DRA2144T0L works by altering the current flow through a circuit. The current flow is regulated by adjusting the voltage applied to the base. The DRA2144T0L is engineered to operate with a single voltage, so the base voltage is the same as the operating voltage. The current flow can be regulated in a number of ways; a single control voltage can be used to adjust the current delivered from the collector, or two control voltages can be used to adjust the current simultaneously in both the collector and the emitter for improved performance.

In addition to the base-emitter and collector-emitter junctions, the DRA2144T0L transistor also contains a third terminal known as the substrate. When the transistor is pre-biased, the substrate is at the same potential as the base, which eliminates the need for an additional bias device. The substrate is also connected to the base, allowing it to be used as a ‘thermal sink’ to ensure that the entire device is running at a constant temperature.

The DRA2144T0L transistor is a popular choice for applications requiring precision control of current and voltage. It is commonly used in power supplies, motor controls, touch dimmers, analog signal processing and various other applications. It is known for its superior performance, low power consumption, and high reliability.

The specific data is subject to PDF, and the above content is for reference