DRA2143Z0L Allicdata Electronics
Allicdata Part #:

DRA2143Z0LTR-ND

Manufacturer Part#:

DRA2143Z0L

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS PREBIAS PNP 200MW MINI3
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: DRA2143Z0L datasheetDRA2143Z0L Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Stock 1000Can Ship Immediately
Specifications
Resistor - Emitter Base (R2): 47 kOhms
Base Part Number: DRA2143
Supplier Device Package: Mini3-G3-B
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Power - Max: 200mW
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Series: --
Resistor - Base (R1): 4.7 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: PNP - Pre-Biased
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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DRA2143Z0L is a single, pre-biased bipolar junction transistor (BJT) that is ideal for many power switch applications. It features a 0.8A Saturated Collector Current (Ic) rating, and a low 0.8V typ. Voltage Drop Collector-Emitter (VCE). This transistor is available in a TO-220 package and has integrated thermal protection.

The working principle of the DRA2143Z0L can be explained in terms of its current flow and its semiconductor components. The transistor is composed of three layers of semiconductor material, base, emitter, and collector. When voltage is applied across the base and emitter (B-E), an electric current starts to travel from the base to the emitter. This current flow is called the base current (IB). As the base current increases, more current is drawn from the collector to the emitter, ultimately forming a complete electric current path between the collector and the emitter. This current is called the collector current (IC). As the collector current becomes larger, the voltage drop between the collector and emitter (VCE) goes down. The voltage drop of the transistor is created by the resistance of the materials used to create the layers of the transistor.

In the case of the DRA2143Z0L, the collector current rating is set to 0.8A and the typical voltage drop between the collector and emitter is 0.8V. This small voltage drop and high current rating make the DRA2143Z0L ideal for power switch applications. With these properties, the voltage drop across the switch is small and the switch can handle higher currents with efficiency.

The DRA2143Z0L is well suited for high power switch applications that must turn high currents at low voltage drops. This transistor can be used in a number of applications such as switching power supplies, motor controllers, and robot arms. It can also be used in automotive applications such as sunroof switches and power door locks. The DRA2143Z0L is also well suited for consumer electronic applications such as televisions and gaming systems.

In summary, the DRA2143Z0L is a single, pre-biased bipolar junction transistor (BJT) that has a 0.8A Saturated Collector Current (Ic) rating and a low 0.8V typ. Voltage Drop Collector-Emitter (VCE). This makes it perfectly suited for high power switch applications that require low voltage drops to minimize energy losses. The DRA2143Z0L is available in a TO-220 package and comes with integrated thermal protection. This transistor is suitable for variety of applications, such as those in automotive, consumer electronics, and industrial automation.

The specific data is subject to PDF, and the above content is for reference

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