DRA2115T0L Discrete Semiconductor Products |
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Allicdata Part #: | DRA2115T0LTR-ND |
Manufacturer Part#: |
DRA2115T0L |
Price: | $ 0.05 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS PNP 200MW MINI3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | DRA2115T0L Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
3000 +: | $ 0.04631 |
6000 +: | $ 0.04167 |
15000 +: | $ 0.03704 |
30000 +: | $ 0.03473 |
75000 +: | $ 0.03087 |
Resistor - Base (R1): | 100 kOhms |
Base Part Number: | DRA2115 |
Supplier Device Package: | Mini3-G3-B |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Mounting Type: | Surface Mount |
Power - Max: | 200mW |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 500µA, 10mA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 160 @ 5mA, 10V |
Series: | -- |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | PNP - Pre-Biased |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
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The DRA2115T0L transistor is a single pre-biased bipolar junction transistor (BJT) which has a wide range of applications in both industrial and consumer devices. While BJTs have been around for quite a while, modern transistors such as the DRA2115T0L have improved in terms of their capabilities and potential applications. This transistor has a higher maximum power dissipation than most standard BJTs, and it is also capable of withstanding higher ambient temperatures. This makes it a great choice for applications that need to operate in extreme environments.
The working principle of this transistor is quite simple. It is a voltage-controlled device which is made up of two layers of electrically conductive material, and a thin layer of material between them known as the base. When a voltage is applied to the base, electrons that are generated by the voltage flow through the base material and arrive at the emitter. This causes the emitter to become positively charged and the electrons to flow through the base and into the collector, creating a current.
The DRA2115T0L offers a wide range of potential applications in industrial and consumer electronics. In industrial settings, this transistor can be used to regulate and control the amplitude of current signals, or it can be used as a switching element in high voltage and power control circuits. In consumer devices, the DRA2115T0L can be used to drive audio amplifiers, reduce noise, provide current regulation, or act as a switch in digital circuits. Overall, the DRA2115T0L is an extremely versatile component which can be used in a wide range of applications.
The DRA2115T0L is a single pre-biased bipolar junction transistor (BJT). This type of transistor has two layers of electrically conductive material and a thin layer of material between them, also known as the base. By applying a voltage to the base, electrons are generated which then flow through the base material and arrive at the emitter, causing the emitter to become positively charged. This causes a current to flow through the base and into the collector, thus allowing the transistor to control current signals or act as a switch in digital circuits.
Overall, the DRA2115T0L is an extremely versatile component which can be used in a wide range of applications across both industrial and consumer electronics. Its ability to withstand high temperatures, regulate current, and control audio amplifiers make this a great choice for applications that require reliability and precision. In addition, the wide range of potential applications make the DRA2115T0L an ideal component for a variety of different environments.
The specific data is subject to PDF, and the above content is for reference
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