DRA2124T0L

Resistor - Base (R1):	22 kOhms
Base Part Number:	DRA2124
Supplier Device Package:	Mini3-G3-B
Package / Case:	TO-236-3, SC-59, SOT-23-3
Mounting Type:	Surface Mount
Power - Max:	200mW
Current - Collector Cutoff (Max):	500nA
Vce Saturation (Max) @ Ib, Ic:	250mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce:	160 @ 5mA, 10V
Series:	--
Voltage - Collector Emitter Breakdown (Max):	50V
Current - Collector (Ic) (Max):	100mA
Transistor Type:	PNP - Pre-Biased
Moisture Sensitivity Level (MSL):	--
Part Status:	Active
Lead Free Status / RoHS Status:	--
Packaging:	Tape & Reel (TR)

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Introduction

DRA2124T0L is an integrated bipolar transistor. It is single, pre-biased, feature independent output stages and are designed to provide high-power performance while maintaining cost efficiency. The device is targeted at cost-sensitive, high-performance applications, such as automotive and aerospace. The device is designed to operate in a high-frequency design environment (ranging from 1 MHz to 2 GHz) and its performance is optimized for use in audio applications.

Application Fields

DRA2124T0L is suitable for a variety of high-performance applications. The device can be used in audio amplifiers, power conversion systems, resonators, filters and voltage regulators. The device is also suitable for computing applications, for example for voltage regulation in motherboards and for current regulation in notebook PCs.

Working Principle

DRA2124T0L is a bipolar junction transistor, which is pre-biased so that it operates in a linear range. The device utilizes two discrete transistors, one NPN and one PNP, in the same package. It is designed to provide improved current gain and output resistance. Both transistors are designed to control each other and to achieve a high degree of linearity.In operation, the device’s base-emitter junction (BEJ) is forward biased with a small DC voltage, and the base-collector junction is reverse biased with a large voltage. The device’s collector current is determined by the base-emitter voltage, and the output voltage is determined by the base-collector voltage. The device functions with a high efficiency and wide bandwidth at relatively low voltages, making it well-suited for power conversion systems.

Conclusion

DRA2124T0L is an integrated bipolar transistor designed for cost-sensitive, high-performance applications. It is a single, pre-biased device that utilizes two discrete transistors in the same package, and is designed to provide improved current gain and output resistance. The device is suitable for a variety of applications, including audio amplifiers, power conversion systems, resonators, and voltage regulators, and is designed to operate in a high-frequency design environment.

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