DRA2523E0L Discrete Semiconductor Products |
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Allicdata Part #: | DRA2523E0LTR-ND |
Manufacturer Part#: |
DRA2523E0L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS PNP 200MW MINI3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | DRA2523E0L Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 500mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 2.2 kOhms |
Resistor - Emitter Base (R2): | 2.2 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 40 @ 100mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 5mA, 100mA |
Current - Collector Cutoff (Max): | 1µA |
Power - Max: | 200mW |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | Mini3-G3-B |
Base Part Number: | DRA2523 |
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The DRA2523E0L is a type of pre-biased bipolar junction transistor (BJT). It is designed to perform as a single pre-biased transistor. It combines the features of a bipolar transistor and a field effect transistor (FET) to provide superior performance in audio and voltage applications.
The DRA2523E0L has a base current that is self-biased, and is typically used in pairs in a SYNTHTECTTM configuration. This configuration is used to reduce input and output capacitance, and to minimize noise in the circuit. It also offers excellent stability and a high slew rate for high-speed operations.
The DRA2523E0L is manufactured using the advanced bipolar process, and includes a variety of advanced circuit protection techniques. These techniques are designed to protect the device against static electricity, overloads, and short circuits. The package is constructed of a plastic case with an epoxy seal and a metal-molybdenum connector.
The working principle of the DRA2523E0L is based on a single-stage, voltage-controlled, current source circuit. When a voltage is applied to the transistor base, a current is directed through the emitter-base junction. This current is then amplified by the collector-base junction and is used to control the output of the transistor. The current is then used either to create an output voltage or to control a load current.
The DRA2523E0L is typically used in amplifier applications to provide voltage output control. It can also be used in voltage regulator systems, to control current flow in power supplies and for motor control. In addition, it can be used as a single-pole, variable-frequency oscillator (VFO) for frequencies up to 1 MHz. It can be used as an audio and microphone amplifiers, or as an output buffer for audio signal processing. Finally, it can be used in radio circuit applications, as an RF signal receiver and transmitter, or as a feedback amplifier for active antenna systems.
The DRA2523E0L is a reliable, low-cost, single pre-biased transistor and is an ideal choice for high-speed and low-noise applications. Its advanced protection and high-quality construction make it an excellent choice for a variety of applications. With a wide range of frequency and applications, the DRA2523E0L is a great choice for many audio and voltage applications.
The specific data is subject to PDF, and the above content is for reference
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