Allicdata Part #: | DRA2123Y0LTR-ND |
Manufacturer Part#: |
DRA2123Y0L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS PNP 200MW MINI3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | DRA2123Y0L Datasheet/PDF |
Quantity: | 6000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Resistor - Emitter Base (R2): | 10 kOhms |
Base Part Number: | DRA2123 |
Supplier Device Package: | Mini3-G3-B |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Mounting Type: | Surface Mount |
Power - Max: | 200mW |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 500µA, 10mA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 5mA, 10V |
Series: | -- |
Resistor - Base (R1): | 2.2 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | PNP - Pre-Biased |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
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The DRA2123Y0L is a single, pre-biased bipolar junction transistor (BJT) that is used for a number of applications. This BJT is typically formed using three electrodes – the base, the collector and the emitter – that control the flow of current. It utilizes a base current to control the current flowing through the collector and the emitter, which can then be used for a variety of tasks including switching and amplification.
The working principle of a single, pre-biased BJT like the DRA2123Y0L is based on the asymmetry of an intrinsic semiconductor, such as silicon or germanium. When a bias current is applied to the collector and the emitter, the resulting potential difference causes electrons to be drawn from the collector and deposited into the emitter. This, in turn, causes the current flowing from the collector to the emitter to increase, and this is the basic principle of operation for a single, pre-biased BJT.
The DRA2123Y0L is commonly used in a variety of applications due to its ability to switch large currents and amplify signals. Some common applications include audio amplifiers, high power switching, timer circuits, and pulse-width modulation. It is also used in a variety of power conversion applications, such as DC-to-DC converters, AC-to-DC converters, AC-DC rectifiers, and DC-to-AC inverters.
In addition, this BJT is also used in a variety of other applications, such as in radio frequency (RF) amplifiers and high-power RF transmitters. The DRA2123Y0L is also commonly used in a number of high-capacity power supplies and motor control applications. Furthermore, this device is also used in a number of low power switching applications, such as in LED lighting, logic circuits, and opto-isolation circuits.
Overall, the DRA2123Y0L is a versatile device that is used for a number of different applications, due to its ability to switch large currents and amplify signals. Its basic working principle centers around the asymmetry of the intrinsic semiconductor material, and the resulting potential difference created by the bias current. As such, this device is suitable for a variety of switching and amplification-related tasks. Additionally, due to its wide range of possible applications, it is commonly used in a variety of applications, such as audio amplifiers, power supplies, radio frequency amplifiers, LED lighting circuits, and more.
The specific data is subject to PDF, and the above content is for reference
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