DRA2144W0L Allicdata Electronics
Allicdata Part #:

DRA2144W0LTR-ND

Manufacturer Part#:

DRA2144W0L

Price: $ 0.05
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS PREBIAS PNP 200MW MINI3
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: DRA2144W0L datasheetDRA2144W0L Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
3000 +: $ 0.04406
6000 +: $ 0.03965
15000 +: $ 0.03524
30000 +: $ 0.03304
75000 +: $ 0.02937
Stock 1000Can Ship Immediately
$ 0.05
Specifications
Resistor - Emitter Base (R2): 22 kOhms
Base Part Number: DRA2144
Supplier Device Package: Mini3-G3-B
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Power - Max: 200mW
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Series: --
Resistor - Base (R1): 47 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: PNP - Pre-Biased
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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DRA2144W0L is a high voltage, ultra low-current, NPN pre-biased type bipolar transistor. It is designed to provide cost-effective solutions for low-voltage, single-ended, large-current applications.

Application field of DRA2144W0L

DRA2144W0L is widely used in a variety of industrial and automotive applications, including electrical power supplies, solar power systems, motor control, and industrial automation. It is suitable for high-voltage operation as it has a breakdown voltage of 250V. This device is ideal for applications that require precise low-current switching, such as low-power relays and motor speed control. It can also be used for lamp control and other general switching applications.

Working Principle of DRA2144W0L

DRA2144W0L is a NPN transistor with pre-biased current gain characteristics. The device is composed of an emitter, a base, and a collector. To set up the transistor\'s operation, a small amount of a positive voltage must be applied to the emitter and the base. This voltage causes a flow of electrons between the emitter and base regions of the device, which then creates a current flow between the emitter and collector. This current then allows the device to amplify or switch signals applied to the base.

The transistor\'s current gain (hfe) is determined by the voltage applied to the emitter and the base. When a larger voltage is applied between the emitter and the base, a larger current will flow between the emitter and collector. This results in an increased current gain, or an increase in the device\'s ability to amplify or switch signals. Conversely, when a smaller voltage is applied between the emitter and the base, a lower current will flow between the emitter and collector, resulting in a lower current gain or an increase in the device\'s ability to switch or amplify signals.

The DRA2144W0L is a pre-biased type of transistor, which means that it has a voltage applied to the collector before switching or amplifying any signals. This is beneficial as it allows the device to have a longer life span due to a decreased amount of voltage applied to the collector.

Conclusion

DRA2144W0L is a high-voltage, pre-biased NPN bipolar transistor that has a wide range of applications in industrial and automotive applications. Its pre-biased current gain characteristics allow it to switch or amplify signals with precision and a longer lifespan. Due to its high performance and low cost, the device is a popular choice for low-voltage, single-ended, large-current applications.

The specific data is subject to PDF, and the above content is for reference

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