Allicdata Part #: | DRA2115G0LTR-ND |
Manufacturer Part#: |
DRA2115G0L |
Price: | $ 0.05 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS PNP 200MW MINI3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | DRA2115G0L Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
3000 +: | $ 0.04631 |
6000 +: | $ 0.04167 |
15000 +: | $ 0.03704 |
30000 +: | $ 0.03473 |
75000 +: | $ 0.03087 |
Resistor - Base (R1): | 100 kOhms |
Base Part Number: | DRA2115 |
Supplier Device Package: | Mini3-G3-B |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Mounting Type: | Surface Mount |
Power - Max: | 200mW |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 500µA, 10mA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V |
Series: | -- |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | PNP - Pre-Biased |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
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The DRA2115G0L is a part of a larger collection of transistors including single and dual bipolar junction transistors (BJT), pre-biased transistors, and complementary BJTs (CBTs). It is an NPN type transistor, specifically giving it a “medium gain” property. This is ideal for a number of applications, such as linear and switch-mode power supplies, audio amplifiers, RF amplifiers, and analog applications.
A BJT is a “three-terminal” semiconductor device constructed from two PN junction layers; as such, it has an emitter (the “N” terminal from an external voltage supply) and a collector (the “P” terminal to the load). The third terminal, the base, is a more complex connection. It applies either voltage or current to the emitter, allowing it to vary the level of current that flows between emitter and collector. The biasing of a transistor is the process of setting the level of current flowing in the transistor so that stable and efficient operation is achieved.
The DRA2115G0L transistor is pre-biased, meaning that there is already a level of current flowing through the emitter and collector before the application of voltage to the base terminal. This allows for improved performance in linear operation, with minimal changes in output or input currents. It also allows for improved efficiency in switch-mode applications, as the transistor can be turned off faster and with less power.
MOSFETs are another type of transistor, used for switching between two different power states. They are controlled by applying a voltage to their gate terminal, and are often used in power supply and motor drive circuits. However, MOSFETs are not suitable for small or medium power applications such as the DRA2115G0L. Therefore, the DRA2115G0L is the ideal choice for these applications.
The DRA2115G0L is an ideal transistor for a number of applications. In audio applications, it can be used to provide a clean and powerful sound, while in switch-mode applications, it can be used to ensure fast switching times with minimal power consumption. Furthermore, it is also suitable for linear operation, making it suitable for a wide variety of scenarios. All in all, the DRA2115G0L is an excellent transistor for a number of applications.
The specific data is subject to PDF, and the above content is for reference
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