ECH8501-TL-H Discrete Semiconductor Products |
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Allicdata Part #: | ECH8501-TL-HOSTR-ND |
Manufacturer Part#: |
ECH8501-TL-H |
Price: | $ 0.22 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN/PNP 30V 5A 8ECH |
More Detail: | Bipolar (BJT) Transistor Array NPN, PNP 30V 5A 280... |
DataSheet: | ECH8501-TL-H Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.20191 |
6000 +: | $ 0.18798 |
15000 +: | $ 0.18566 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN, PNP |
Current - Collector (Ic) (Max): | 5A |
Voltage - Collector Emitter Breakdown (Max): | 30V |
Vce Saturation (Max) @ Ib, Ic: | 110mV @ 125mA, 2.5A |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 200 @ 500mA, 2V |
Power - Max: | 1.6W |
Frequency - Transition: | 280MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SMD, Flat Lead |
Supplier Device Package: | 8-ECH |
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Transistors – Bipolar (BJT) – Arrays have been used for a variety of different applications in many industries. The ECH8501-TL-H is a high-performance Bipolar Junction Transistor Array manufactured by Chicago Electronic Components. It is designed for use in switching and high current applications.
The device is constructed from three NPN bipolar transistors, all with separate emitters, common base and collectors, connected in an array. This structure provides three times the switching current, power and voltage ratings of an equivalent single transistor. It has a maximum allowable power dissipation of 6 Watts and can drive up to 6A at a peak power of up to 70W.
The ECH8501-TL-H is a low-cost, surface-mount device with an operating temperature range of -40°C to +85°C, making it ideal for use in a wide range of applications. Its high switching speed and low thermal resistance make it suitable for a variety of applications, including high-speed, high-current switching and motor driving.
The working principle of ECH8501-TL-H is based on the principle of a bipolar junction transistor, also referred to as a BJT. In this device, two p-type semiconductor materials are sandwiched between a n-type material, forming a diode junction. When current is applied to the base, it selectively switches on extra current through the collectors and emitter, allowing current to flow from the collector to the emitter, thus allowing switching or amplification to take place.
The ECH8501-TL-H is suitable for a wide range of applications, from high power switching to low power signal amplification. It is used in a variety of switching and sensing applications such as Automotive Control Systems, Telecommunications, Factory Automation, Industrial Control and Lighting. In industrial applications, it is used in relay drivers, motor drivers, solenoids and voltage regulator circuits.
Its advantages include robust performance in adverse environmental conditions, high current capacity and low power dissipation. Due to its array configuration, a single ECH8501-TL-H can save space and reduce costs when compared to equivalent devices with multiple single transistors.
Overall, the ECH8501-TL-H is a high-performance Bipolar Junction Transistor Array manufactured by Chicago Electronic Components. It is designed for use in switching and high current applications and is suitable for a wide range of applications. It provides robust performance in adverse environmental conditions, high current capacity and low power dissipation.
The specific data is subject to PDF, and the above content is for reference
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