ECH8501-TL-H Allicdata Electronics

ECH8501-TL-H Discrete Semiconductor Products

Allicdata Part #:

ECH8501-TL-HOSTR-ND

Manufacturer Part#:

ECH8501-TL-H

Price: $ 0.22
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN/PNP 30V 5A 8ECH
More Detail: Bipolar (BJT) Transistor Array NPN, PNP 30V 5A 280...
DataSheet: ECH8501-TL-H datasheetECH8501-TL-H Datasheet/PDF
Quantity: 1000
3000 +: $ 0.20191
6000 +: $ 0.18798
15000 +: $ 0.18566
Stock 1000Can Ship Immediately
$ 0.22
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN, PNP
Current - Collector (Ic) (Max): 5A
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 110mV @ 125mA, 2.5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Power - Max: 1.6W
Frequency - Transition: 280MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 8-ECH
Description

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Transistors – Bipolar (BJT) – Arrays have been used for a variety of different applications in many industries. The ECH8501-TL-H is a high-performance Bipolar Junction Transistor Array manufactured by Chicago Electronic Components. It is designed for use in switching and high current applications.

The device is constructed from three NPN bipolar transistors, all with separate emitters, common base and collectors, connected in an array. This structure provides three times the switching current, power and voltage ratings of an equivalent single transistor. It has a maximum allowable power dissipation of 6 Watts and can drive up to 6A at a peak power of up to 70W.

The ECH8501-TL-H is a low-cost, surface-mount device with an operating temperature range of -40°C to +85°C, making it ideal for use in a wide range of applications. Its high switching speed and low thermal resistance make it suitable for a variety of applications, including high-speed, high-current switching and motor driving.

The working principle of ECH8501-TL-H is based on the principle of a bipolar junction transistor, also referred to as a BJT. In this device, two p-type semiconductor materials are sandwiched between a n-type material, forming a diode junction. When current is applied to the base, it selectively switches on extra current through the collectors and emitter, allowing current to flow from the collector to the emitter, thus allowing switching or amplification to take place.

The ECH8501-TL-H is suitable for a wide range of applications, from high power switching to low power signal amplification. It is used in a variety of switching and sensing applications such as Automotive Control Systems, Telecommunications, Factory Automation, Industrial Control and Lighting. In industrial applications, it is used in relay drivers, motor drivers, solenoids and voltage regulator circuits.

Its advantages include robust performance in adverse environmental conditions, high current capacity and low power dissipation. Due to its array configuration, a single ECH8501-TL-H can save space and reduce costs when compared to equivalent devices with multiple single transistors.

Overall, the ECH8501-TL-H is a high-performance Bipolar Junction Transistor Array manufactured by Chicago Electronic Components. It is designed for use in switching and high current applications and is suitable for a wide range of applications. It provides robust performance in adverse environmental conditions, high current capacity and low power dissipation.

The specific data is subject to PDF, and the above content is for reference

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