ECH8668-TL-H Discrete Semiconductor Products |
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Allicdata Part #: | ECH8668-TL-HOSTR-ND |
Manufacturer Part#: |
ECH8668-TL-H |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N/P-CH 20V 7.5A/5A ECH8 |
More Detail: | Mosfet Array N and P-Channel 20V 7.5A, 5A 1.5W Sur... |
DataSheet: | ECH8668-TL-H Datasheet/PDF |
Quantity: | 3000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N and P-Channel |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 7.5A, 5A |
Rds On (Max) @ Id, Vgs: | 17 mOhm @ 4A, 4.5V |
Vgs(th) (Max) @ Id: | -- |
Gate Charge (Qg) (Max) @ Vgs: | 10.8nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 1060pF @ 10V |
Power - Max: | 1.5W |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SMD, Flat Lead |
Supplier Device Package: | 8-ECH |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Introduction
ECH8668-TL-H is a family of transistors arranged for switching. It is also referred to as field effect transistors (FETs) or Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) and is widely used in microelectronic applications.
Application Field
The ECH8668-TL-H has wide application in both small scale and large scale systems. Common applications include power conversion, power electronics, motor control, and automotive applications. The ECH8668-TL-H is frequently used in small electronic systems as an electronic switch or regulator.
The ECH8668-TL-H is well-suited for large-scale power applications as well. It is frequently used as a voltage regulator controller in power converters, uninterruptible power supplies, and other similar applications. Additionally, the ECH8668-TL-H is suitable for implementing current-mode linear regulators, which are often found in automotive applications.
Working Principle
The ECH8668-TL-H is a type of field-effect transistor (FET) that uses metal-oxide-semiconductor technology. The FET consists of a gate, drain, and source, which are connected by a channel of semiconductor material. The channel is formed between a gate electrode and the silicon body (or substrate) of the device. A suitable voltage applied to the gate controls the operation of the transistor.
The ECH8668-TL-H is a depletion-mode FET. This means that applying a voltage to the gate will cause current to flow between the drain and source. The gate voltage also controls the magnitude of the current, which can be used to create voltage or current regulators. In order to increase or decrease the magnitude of the current through the device, the gate voltage must be adjusted accordingly.
The ECH8668-TL-H is also a high voltage FET, which makes it suitable for use in high voltage circuits. The maximum voltage it can handle is typically around 600 V, though this can vary depending on the manufacturer.
Conclusion
The ECH8668-TL-H is a type of field effect transistor that can be used in many applications. It is often used in microelectronic systems as an electronic switch or regulator and is also suitable for large-scale power applications. It is a depletion-mode FET and a high voltage FET, which makes it suitable for use in high voltage circuits.
The specific data is subject to PDF, and the above content is for reference
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