ECH8502-TL-H Allicdata Electronics
Allicdata Part #:

ECH8502-TL-HOSTR-ND

Manufacturer Part#:

ECH8502-TL-H

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN/PNP 100V/50V 5A 8ECH
More Detail: Bipolar (BJT) Transistor Array NPN, PNP 100V, 50V ...
DataSheet: ECH8502-TL-H datasheetECH8502-TL-H Datasheet/PDF
Quantity: 3000
Stock 3000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN, PNP
Current - Collector (Ic) (Max): 5A
Voltage - Collector Emitter Breakdown (Max): 100V, 50V
Vce Saturation (Max) @ Ib, Ic: 120mV @ 125mA, 2.5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Power - Max: 1.6W
Frequency - Transition: 290MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 8-ECH
Description

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The ECH8502-TL-H is an array of a highly integrated, low operating voltage PNP transistors. This device can provide an individually matched pair of transistors in a single package with an assembly area and system cost savings over the use of two standard packages. This device can be used for many different applications including those in the power electronics, audio and motion control fields. It offers a low on-state resistance and is also capable of handling high current densities.

The ECH8502-TL-H offers maximum power dissipation of 3 watts and a minimum collector-emitter breakdown voltage of 8 volts. It has a low saturation voltage of 0.30Vmax and a high betta current gain of 0.50. The device is optimized for applications with a wide range of input levels. The ECH8502-TL-H offers low noise operation with a 0.35µVrms parameter at 1kHz. It also features high ESD protection of up to 8kV.

The ECH8502-TL-H consists of an integrated high-speed PNP array with low noise levels. The device has an integrated circuitry with high gain amplifier transistors integrated in a single package. It utilizes a structure which requires fewer components and offers higher performance than conventional discrete transistors. The device is designed to provide excellent power output with a low on-state power dissipation. The ECH8502-TL-H is also designed for a wide variety of applications due to its high operating temperature range.

The ECH8502-TL-H features low on-state resistance which reduces total power dissipation. It also has an input range of 0.2V-20V and an output range of 0-10V. The device is capable of delivering power in excess of 300mA and enabling high current densities. This device is well-suited for motion control and audio applications. It has high ripple rejection capability and excellent transient protection. In addition, it offers a high voltage linearity range of up to 10 Volts.

The ECH8502-TL-H is designed for use in applications requiring high linearity, low noise figure performance and high gain capabilities. It is also suitable for use in power switching applications due to its low on-state resistance. This device is a general purpose high gain amplifier that can be used for audio, motion control and other applications. With its wide operating temperature range and high voltage linearity, the ECH8502-TL-H provides excellent performance in a wide variety of applications.

The specific data is subject to PDF, and the above content is for reference

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