ECH8691-TL-W Allicdata Electronics
Allicdata Part #:

ECH8691-TL-W-ND

Manufacturer Part#:

ECH8691-TL-W

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET 2P-CH ECH8
More Detail: Mosfet Array
DataSheet: ECH8691-TL-W datasheetECH8691-TL-W Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: *
Packaging: --
Part Status: Active
Mounting Type: --
Package / Case: --
Supplier Device Package: --
Description

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The ECH8691-TL-W is a dual power MOSFET array designed for high voltage and high current switching applications. It is a CMOS-compatible choice, providing lower conductance and higher operating frequencies than predecessor devices. It features two individually controlled N-channel power MOSFETs in an 8-pin dual in-line package. This low-cost power device offers superior performance and a wide range of versatile logic level gate driving capabilities, making it ideal for use in both consumer and industrial circuits.

An array is a set of two electrically connected MOSFETs that share the same source. The ECH8691-TL-W has two N-channel MOSFETs, each with its own logic-level gate inputs. The two MOSFETs are connected in parallel, so both may be on at the same time for increased current flow. Its low Ron of 0.15 ohms and low Qg of 78nC make it useful in high-current switching applications. The device\'s wide gate turn-on threshold range (1.1 – 11V) allows designers to more accurately control gate voltage, which offers more options for designing reliable circuitry.

The ECH8691-TL-W is ideal for use in DC-DC converters, switching power supplies, motor and LED control, and similar high-voltage, high-current applications. Its bi-directional capability, low input capacitance, fast switching speed, and robust construction make it an excellent choice for designs where reliable, high-voltage/high-current operation is needed.

The working principle of the ECH8691-TL-W is based on its two MOSFETs, which are configured in a parallel configuration. When a logic-level signal of the desired potential is applied to either MOSFET, the device\'s threshold voltage turns on the MOSFET. This causes current to flow, allowing the desired voltage or current level to be attained. As the current flows, a low-resistance path is created, allowing the current to flow at a higher level. The device can then be turned off by applying a zero-volt or high-impedance signal to the gate of either MOSFET.

The ECH8691-TL-W is a great choice for high-current switching applications. Its low on-resistance, wide gate turn-on threshold range, and bi-directional capability make it ideal for designs that require reliable performance. Its convenient in-line package makes it easy to integrate into existing circuitry, and its low-cost price point makes it attractive for a variety of cost-sensitive applications.

The specific data is subject to PDF, and the above content is for reference

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