Allicdata Part #: | ECH8308-TL-HOSTR-ND |
Manufacturer Part#: |
ECH8308-TL-H |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 12V 10A ECH8 |
More Detail: | P-Channel 12V 10A (Ta) 1.6W (Ta) Surface Mount 8-E... |
DataSheet: | ECH8308-TL-H Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 12V |
Current - Continuous Drain (Id) @ 25°C: | 10A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs: | 12.5 mOhm @ 5A, 4.5V |
Vgs(th) (Max) @ Id: | -- |
Gate Charge (Qg) (Max) @ Vgs: | 26nC @ 4.5V |
Vgs (Max): | ±10V |
Input Capacitance (Ciss) (Max) @ Vds: | 2300pF @ 6V |
FET Feature: | -- |
Power Dissipation (Max): | 1.6W (Ta) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-ECH |
Package / Case: | 8-SMD, Flat Lead |
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The ECH8308-TL-H is a high performance single N-Channel MOSFET (Metal-Oxide Semiconductor Field Effect Transistor) which is suitable for both industrial and consumer applications. This device can be used as a power switch and is suitable for high-speed switching at high voltage, low on-resistance, and low charge injection. It has a maximum Drain Current of 3 amps, a Gate Threshold Voltage of 2 Volts, and an On State Resistance of 0.0013 ohms. This device features a low capacitance design, fast switching speeds, and ESD tolerance.
The ECH8308-TL-H is a single N-Channel MOSFET which is designed for high current applications. It has an on-resistance of 0.0013 ohms and a Gate Threshold Voltage of 2 Volts. This device is suitable for high voltage operations and is capable of handling up to 3 amps of maximum Drain Current. The device is also characterized by its fast switching speeds and its low capacitance design which reduces the amount of charge injection.
The working principle of the ECH8308-TL-H MOSFET is based on its N-Channel structure. This means that a positive gate voltage is applied to the device, which then creates a channel for the electrons to flow. As the electrons flow through this channel, the drain voltage rises to the source voltage and a current is produced. This device also contains a dielectric barrier which prevents electrons from being leaked from the channel, making it an efficient power switch.
The ECH8308-TL-H is mainly used in a variety of industrial and consumer applications. It is an ideal device for use in switching power controllers, motor speed controllers, LED lighting systems, battery chargers, and medical equipment. This device is also suitable for applications where high speed switching is required. Additionally, the ECH8308-TL-H is designed to provide reliable performance in high-temperature environments and is well-suited for hot-swap operations.
In conclusion, the ECH8308-TL-H is a single N-Channel MOSFET which is designed to offer high performance in both industrial and consumer applications. This device has a maximum Drain Current of 3 amps and a Gate Threshold Voltage of 2 Volts with an On State Resistance of 0.0013 ohms. Its low capacitance design and fast switching speeds also make it well-suited for high-speed switching operations. The device is mainly used for switching power controllers, motor speed controllers, LED lighting systems, battery chargers, and medical equipment. Due to its reliable performance and wide usage range, the ECH8308-TL-H is a popular choice for many power switching applications.
The specific data is subject to PDF, and the above content is for reference
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