ECH8315-TL-W

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The ECH8315-TL-W is a single N-Channel enhancement mode Field-Effect Transistor (FET) that is designed using advanced trench technology for improved RDS(on) and performance. The FET has a 30V Drain-source breakdown voltage that can provide an RDS(on) as low as 0.028 ohms over an operating temperature range of -55° to 150°C.

The ECH8315-TL-W is suitable for a wide range of applications such as power management, audio and video signal switching, DC motor controllers, automotive switching and inducer motor controllers.

The ECH8315-TL-W has several advantages including low power loss, low on-state resistance, low gate charge, and low threshold voltage. It also has an integrated Schottky diode, which can limit the maximum voltage and current when the FET is turned off, thus reducing power losses.

The ECH8315-TL-W works by using gate voltage to modulate a voltage potential between the drain (D) and source (S) terminals. When the gate voltage (VGS) is below the threshold voltage (VTH), the FET is off, meaning that the channel between the D and S is pinched off. This results in a very high resistance between D and S so that no current flows. When VGS reaches and exceeds the threshold voltage, the FET is on and creates a very low resistance channel between the D and S, allowing current to flow freely.

The ECH8315-TL-W can provide cost effective and reliable performance in a variety of applications, and is a great choice for power management and motor control where low on-state resistance, low power loss, and low gate charge are required.

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