Allicdata Part #: | ECH8102-TL-HOSTR-ND |
Manufacturer Part#: |
ECH8102-TL-H |
Price: | $ 0.16 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 30V 12A ECH8 |
More Detail: | Bipolar (BJT) Transistor PNP 30V 12A 140MHz 1.6W S... |
DataSheet: | ECH8102-TL-H Datasheet/PDF |
Quantity: | 3000 |
3000 +: | $ 0.15242 |
6000 +: | $ 0.14190 |
15000 +: | $ 0.14015 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 12A |
Voltage - Collector Emitter Breakdown (Max): | 30V |
Vce Saturation (Max) @ Ib, Ic: | 135mV @ 300mA, 6A |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 200 @ 500mA, 2V |
Power - Max: | 1.6W |
Frequency - Transition: | 140MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SMD, Flat Lead |
Supplier Device Package: | 8-ECH |
Description
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ECH8102-TL-H is a kind of bipolar junction transistor (BJT) which belongs to the single chip subcategory. This type of transistor is a three-terminal semiconductor device composed of two p-n junction that are joined together. It is used for modulation and amplification of electric signals. The ECH8102-TL-H has a built-in base and collector resistor, and can be used for various applications as switch, amplifier or amplifier switching devices.The ECH8102-TL-H is a NPN-type BJT transistor and comprises of two PN junctions. One PN junction forms the Base-Emitter junction and the other PN junction forms the Base-Collector junction. The transistor has two terminals namely Base and Collector, whereas the Emitter is common and connected to the ground. The two PN junctions in the transistor have very different doping concentrations. The Base-Emitter junction has higher doping concentration compared to the Base-Collector junction.The working principle of the ECH8102-TL-H is based on the operation of two PN junctions: when the voltage applied at the Base terminal is increased, the current through the Base-Emitter junction increases, allowing current to flow from the Collector to the Emitter, that is, from the Collector to the Base. Thus, it creates a path for the current to flow from the Collector to the Emitter. As the current increases, the Base-Emitter junction gets "saturated" and the current passing through it is constant for a given base voltage.The ECH8102-TL-H can be used in various applications such as switching, amplifiers, photo couplers, driver circuits, and many more. The ECH8102-TL-H is widely used in consumer electronic products such as smartphones, laptops, and televisions. It can also be used in automobiles, robotics, industrial, and communication systems.The ECH8102-TL-H has many features that make it ideal for many applications. It has low voltage and current requirements, fast switching speeds, high gain, and high collector-emitter voltage. Furthermore, it has low power dissipation, which makes it an ideal choice for applications where power management is essential, such as automotive and communication systems.Moreover, the ECH8102-TL-H has a high breakdown voltage, which makes it suitable for applications where high voltages or current changes occur. It also has good thermal conductivity, which ensures good performance even in high temperature environments. Lastly, the ECH8102-TL-H has a long life, making it ideal for applications where the life expectancy is important, such as industrial applications.In short, the ECH8102-TL-H is a highly versatile transistor which offers great performance and reliability, making it suitable for a wide range of applications. It is a cost effective and easy to use device, and its features make it an ideal choice for many applications across various industries.
The specific data is subject to PDF, and the above content is for reference
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