ECH8659-TL-W

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
FET Type:	2 N-Channel (Dual)
FET Feature:	Logic Level Gate, 4V Drive
Drain to Source Voltage (Vdss):	30V
Current - Continuous Drain (Id) @ 25°C:	7A
Rds On (Max) @ Id, Vgs:	24 mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id:	2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	11.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:	710pF @ 10V
Power - Max:	1.3W
Operating Temperature:	150°C (TJ)
Package / Case:	8-SMD, Flat Lead
Supplier Device Package:	SOT-28FL/ECH8

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction to ECH8659-TL-W

ECH8659-TL-W, also known as E-MOSFET, is a type of Metal Oxide Field-Effect Transistor (MOSFET) designed for use in many electronic applications. It is a high-speed, low-power switch designed to deliver optimum performance in both low-voltage and high-voltage applications. The device can achieve high switching frequencies and minimize power consumption, making it an ideal choice for power management and power control. This type of MOSFET has also been successfully integrated into several industrial applications and commercial products.

Application Field of ECH8659-TL-W

ECH8659-TL-W is most commonly used in power management applications and power control. This consists of DC-DC converters, AC-DC converters, LED drivers, multi-phase buck and boost controllers, motor speed controllers, voltage regulators, and so on. This device can also be found in several industrial applications, such as automation systems, electric vehicles, power supplies, and power stages. Due to its operations in a wide range of voltages, it can be fine-tuned to meet the requirements of various industrial applications. Its low on-resistance also makes it a suitable choice for high-speed switching applications, such as in switching power converters.

Working Principle of ECH8659-TL-W

ECH8659-TL-W, being a MOSFET, works on the electric field-effect principle. It is composed of a gate, drain, and source. When a voltage is applied between the gate and source terminals, it creates a strong electric field that controls the flow of electrons between the drain and source terminals and functions as an electronic switch. Essentially, when the electric field between the gate and source is increased, the device turns on and conducts current, while when the field is reduced, the device will turn off and stop conducting. The electric current simply flows in one direction when the device is on and is stopped completely when it is off.

Benefits of Using ECH8659-TL-W

ECH8659-TL-W offers several benefits as compared to other transistors, making it an ideal choice for many applications. It is extremely low on-resistance, which means that it can allow more current to flow at lower voltages, resulting in greater efficiency and power savings. Additionally, it has the ability to operate in a wide range of voltages and temperatures, making it suitable for a variety of uses. It has a fast switching speed, which makes it suitable for high speed applications, as well as low power consumption. Lastly, it is relatively easy to integrate into designs and has a long operating life.

Conclusion

The ECH8659-TL-W is a versatile MOSFET designed for power management and control applications. It offers many advantages over other transistors, such as low on-resistance, fast switching, low power consumption, and wide range of operation voltages and temperatures. With its wide range of applications, it is no wonder why this type of MOSFET has become increasingly popular and is often used in various industrial and commercial products.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description