Allicdata Part #: | ECH8654-TL-HX-ND |
Manufacturer Part#: |
ECH8654-TL-HX |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | INTEGRATED CIRCUIT |
More Detail: | Mosfet Array |
DataSheet: | ECH8654-TL-HX Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Part Status: | Last Time Buy |
FET Type: | -- |
FET Feature: | -- |
Drain to Source Voltage (Vdss): | -- |
Current - Continuous Drain (Id) @ 25°C: | -- |
Rds On (Max) @ Id, Vgs: | -- |
Vgs(th) (Max) @ Id: | -- |
Gate Charge (Qg) (Max) @ Vgs: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | -- |
Power - Max: | -- |
Operating Temperature: | -- |
Mounting Type: | -- |
Package / Case: | -- |
Supplier Device Package: | -- |
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The device ECH8654-TL-HX is an array of Field-Effect Transistors (FETs) based on N-MOS technology and designed for signal amplification, signal buffering, and level shifting applications. This device is capable of supplying up to 150 mA of current in order to interface with and to drive higher power devices.
The ECH8654-TL-HX is configured as a 4x3 array of identical FETs, each FET containing 18 elements and having optimal performance ratios for signal buffering and level shifting. The FETs are internally connected in a 4 source configuration for ease of use and configuration.
The voltage-controlled component of the FET is the gate. It is the gate which enables and controls the flow of current through the device, depending on the gate-source voltage and the type of FET being used. The Gate-Source voltage, VGS, is the input parameter which is used to control the flow of current in an FET. The most common application is to use the voltage of the gate terminal to control the current flowing in the drain terminal.
The gate’s capacitance is an important factor when considering the performance of the device. It is the capacitance between the gate and the source which controls the speed of the FET. The capacitance between the gate and the source is called Cgs. As the value of Cgs increases, the drive capability and the speed of the FET increases.
To enable the gate of a FET, the source terminal must be set to a voltage lower than the voltage applied to its gate terminal. To turn the gate of a FET off, the gate voltage must be set to a voltage lower than the source terminal.
Another important aspect of the FET is the channel width, W. The channel width describes the number of electrons which can pass through the FET channel per unit area. It is the channel width which determines the maximum drain current that can be delivered by the FET. The wider the channel, the greater the drain current that can be delivered.
The ECH8654-TL-HX provides optimized I-V characteristics and small drain-source on-off ratio which makes it ideal for signal amplification, buffering and level shifting applications. The device can be easily configured with a wide range of voltage supplies and driving conditions, making it highly versatile and customizable to suit specific designs.
In summary, the ECH8654-TL-HX is an ideal choice for signal amplification, buffering and level shifting applications where high current capability, small signal gain and low drain-source leakage are required. The device is optimized for optimal performance ratios and the ability to be easily configured in a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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