ECH8619-TL-E Discrete Semiconductor Products |
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Allicdata Part #: | 869-1156-2-ND |
Manufacturer Part#: |
ECH8619-TL-E |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N/P-CH 60V 3A/2A ECH8 |
More Detail: | Mosfet Array N and P-Channel 60V 3A, 2A 1.5W Surfa... |
DataSheet: | ECH8619-TL-E Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N and P-Channel |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 3A, 2A |
Rds On (Max) @ Id, Vgs: | 93 mOhm @ 1.5A, 10V |
Vgs(th) (Max) @ Id: | -- |
Gate Charge (Qg) (Max) @ Vgs: | 12.8nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 560pF @ 20V |
Power - Max: | 1.5W |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SMD, Flat Lead |
Supplier Device Package: | 8-ECH |
Base Part Number: | ECH8619 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The ECH8619-TL-E is a high power, low RDSon, dual N-channel MOSFET transistor. It has a TDP rating of 162W, an operating voltage of -60V to 180V, and a maximum on-state drain current of -50A. The ECH8619-TL-E is an ideal choice for applications that require high power and excellent heat dissipation.
The ECH8619-TL-E is a dual N-channel MOSFET array. It is composed of two N-channel MOSFETs in parallel. They are both connected in series with the drain and source pins linked together, creating a single low-on-resistance MOSFET. This allows for higher power handling capability and better heat dissipation than a single MOSFET.
The ECH8619-TL-E can be used in a variety of applications, such as power switching, motor control, and RF switching. The device can also be used for high-speed switching, making it suitable for a wide range of applications. Its high power handling capability means it can be used in applications that require higher powers, such as high current power converters and drivers.
The working principle of the ECH8619-TL-E is simple. It is a dual MOSFET array which works by controlling the flow of electrons through two MOSFETs in parallel. When the gate voltage is increased, the current flow through the channel increases and the channel resistance is decreased, allowing current to flow easily. Conversely, when the gate voltage is decreased, the channel resistance increases, limiting the amount of current that can flow through the channel.
The ECH8619-TL-E has two gate pins – one gate for each MOSFET – and one drain pin. The total on-state resistance of the device is determined by the gate voltage and the drain voltage, and the voltage being applied to the gate controls the on-state resistance. The drain voltage, meanwhile, is typically kept as low as possible to minimize the on- state resistance.
The ECH8619-TL-E is a robust and reliable MOSFET array, offering excellent power handling capability and good heat dissipation. Its simple design makes it easy to use and suitable for a variety of applications. It is the perfect choice for applications requiring high power, high speed switching, and excellent heat dissipation.
The specific data is subject to PDF, and the above content is for reference
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