ECH8310-TL-H Allicdata Electronics
Allicdata Part #:

ECH8310-TL-HOSTR-ND

Manufacturer Part#:

ECH8310-TL-H

Price: $ 0.22
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET P-CH 30V 9A ECH8
More Detail: P-Channel 30V 9A (Ta) 1.5W (Ta) Surface Mount 8-EC...
DataSheet: ECH8310-TL-H datasheetECH8310-TL-H Datasheet/PDF
Quantity: 1000
1 +: $ 0.22000
10 +: $ 0.21340
100 +: $ 0.20900
1000 +: $ 0.20460
10000 +: $ 0.19800
Stock 1000Can Ship Immediately
$ 0.22
Specifications
Vgs(th) (Max) @ Id: --
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 8-ECH
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 17 mOhm @ 4.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The ECH8310-TL-H is a single n-channel logic level enhancement mode MOSFET with a low threshold voltage and low on-resistance. It is designed to be used as an adjustable constant current source in power applications and is used to switch large power devices in an electronic system. It is an ideal device for high density and low power applications due to its low gate capacitances and low power dissipation.

The ECH8310-TL-H MOSFET has an array of features that make it suitable for use in various applications. The low gate threshold voltage makes it suitable for logic level devices, which require very low input biases. The low on-resistance makes it suitable for applications in which a large amount of power needs to be switched on and off. Its high current density makes it suitable for switching power devices with high power loads on and off, such as pumps and motors. The low gate capacitances make it suitable for applications requiring fast switching times, such as high frequency switching power supplies and motor control.

The ECH8310-TL-H is also suitable for use in other types of applications. The relatively low on-resistance and its low gate threshold makes it suitable for applications in which switch-mode power supplies need to be designed. Its high current density makes it suitable for driving high power loads such as motors and pumps, and its low gate capacitances make it suitable for power conversion applications. The ECH8310-TL-H is also suitable for low voltage battery applications, such as those in wireless sensors and remote controls.

The working principle of the ECH8310-TL-H MOSFET is based on its structure. The gate threshold voltage is typically determined by the gate oxide layer and is a function of the applied voltage. When a relatively low gate voltage is applied, the MOSFET will turn on and current will flow through the device. As the applied gate voltage increases, the MOSFET will turn on more, allowing more current to flow.

The ECH8310-TL-H is an ideal device for low voltage battery applications, as it offers a low gate threshold voltage, low on-resistance, high current density and low gate capacitance. It can be used to switch various power devices in an electronic system and is suitable for high frequency switching and motor control applications, as well as power conversion circuits. The ECH8310-TL-H also offers reliability, with a safe operating area, an H-level rating of 3.0V and an ESD rating of 8kV.

The specific data is subject to PDF, and the above content is for reference

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