Allicdata Part #: | FDC6301N_G-ND |
Manufacturer Part#: |
FDC6301N_G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET 2 N-CH 25V SUPERSOT6 |
More Detail: | Mosfet Array 2 N-Channel (Dual) 25V 220mA 700mW Su... |
DataSheet: | FDC6301N_G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 25V |
Current - Continuous Drain (Id) @ 25°C: | 220mA |
Rds On (Max) @ Id, Vgs: | 4 Ohm @ 400mA, 4.5V |
Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 0.7nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 9.5pF @ 10V |
Power - Max: | 700mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package: | SuperSOT™-6 |
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The FDC6301N_G is a bridge-connected FET array optimized for DC brushless motor applications, designed by Fairchild Semiconductor. It is a dual low side E-Switch gate driver utilized in BLDC motors and permanent magnet synchronous motors (PMSMs). It contains two fully-protected low side N-Channel MOSFETs, integrated with a charge pump IC, allowing for an efficient and cost-effective solution for low side gate drive applications.
The FDC6301N_G features built-in protection and fault reporting functions which protect the motor driver from current overloads, overtemperature and under voltage. It is a highly efficient, low heat dissipation and space saving device that reduces the total cost of the implementation and overall system complexity. The protection and fault reporting functions are designed to ensure that the power system is properly distributed.
The FDC6301N_G application field and working principle is based on the principle of controlling the switching of a DC brushless motor through the controlling of the voltage that is supplied to its gate terminals. This voltage is controlled by the charge pump which allows higher level of efficiency. The FDC6301N_G provides appropriate gate drive signals to the two N-channel MOSFETs that control the power switches of the motor. The FDC6301N_G contains an input terminal that receives the PWM signal of the motor. This signal is used to turn on and off the two power switches at the desired intervals. When the circuit is activated, the chip pulls its two high-side outputs high and its two low-side outputs low. The outputs are then driven through the two provided high-side N-channel MOSFETs which control the current flow in the motor. The two output terminals are connected to the gate of the two power MOSFETs in the motor circuit.
In order to ensure efficient gate drive in the motor, the chip contains a charge pump which generates higher voltages at the output. The charge pump draws the current only when it is required and hence increases the efficiency of the system throughout. The chip further provides the advanced protection and fault reporting functions which protects the system from excessive current, overtemperature and under voltage conditions. The chip is rated to operate at an unregulated voltage source of up to 12V and across a wide temperature range of -40 to +125 °C.
The FDC6301N_G provides an optimal solution for low side gate drive applications. The device is small, efficient, and provides built-in protection for motor control applications. It is an ideal choice for motor control systems which require low power and space saving solutions.
The specific data is subject to PDF, and the above content is for reference
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