Allicdata Part #: | FDC606PTR-ND |
Manufacturer Part#: |
FDC606P |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 12V 6A SSOT-6 |
More Detail: | P-Channel 12V 6A (Ta) 1.6W (Ta) Surface Mount Supe... |
DataSheet: | FDC606P Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
Package / Case: | SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package: | SuperSOT™-6 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.6W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1699pF @ 6V |
Vgs (Max): | ±8V |
Gate Charge (Qg) (Max) @ Vgs: | 25nC @ 4.5V |
Series: | PowerTrench® |
Rds On (Max) @ Id, Vgs: | 26 mOhm @ 6A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 6A (Ta) |
Drain to Source Voltage (Vdss): | 12V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The FDC606P is a type of Junction Field Effect Transistor (JFET), labeled with a “P” following the manufacturing code, indicating it is a P-channel type, meaning the voltage which needs to be applied for current to be allowed to flow through is of a negative value. The FDC606P is a three terminal device; a source (S), a drain (D) and a gate (G).
The FDC606P is intended to be used in power applications with its maximum power rating of 3A and a voltage of 30V. This is due to its high current rating as well as its ability to switch high voltages between source and drain. This makes it suitable for use in audio amplifiers such as those used in home entertainment systems or car stereos for example.
In regards to the working principle, the FDC606P functions the same as any other JFET, meaning it works by altering the width of a channel formed between the source and drain. A positive voltage applied to the JFET gate allows electrons to flow from the source to the drain. Conversely, a negative voltage applied to the gate from the source blocks current from flowing. This operation is performed in a voltage-controlled fashion, meaning as the voltage on the gate increases, the channel width decreases, allowing less current to flow. This is shown by the varying of the drain-source voltage (Vds) with respect to the gate-source voltage (Vgs).
The FDC606P’s drain current is regulated by the voltage applied to the gate. When the FDC606P is saturated, the voltage on the gate has no effect on the drain current,but rather will be limited by the current flowing through the channel. When the FDC606P is operating in the linear region, the current flowing through the channel is regulated by the drain-source voltage and gate-source voltage.
When it comes to pinout, the source has a pin configuration of S, G and D from left to right. As mentioned before, S is the source, G is the gate and D is the drain. The FDC606P, as with most JFETs, is often used as an electronic switch in that the drain current is allowed to flow or blocked depending on the voltage applied to the gate.
The FDC606P also has several features designed to accommodate optimal power performance. Some features include low drive voltage, low static power dissipation, small size and excellent frequency response. Lastly, the FDC606P is equipped with a low noise figure (NL) making it suitable for use in noise sensitive applications.
In conclusion, the FDC606P is a versatile JFET suitable for use in a variety of power applications, allowing current to be regulated with the change of voltage applied to the gate. It has high current rating and frequency response and is available in a smaller package size than other JFETs. As such, the FDC606P is an attractive choice for power amplifiers, audio systems or low noise applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
FDC636P | ON Semicondu... | -- | 1000 | MOSFET P-CH 20V 2.8A SSOT... |
FDC602P_F095 | ON Semicondu... | 0.0 $ | 1000 | MOSFET P-CH 20V 5.5A 6SSO... |
FDC633N_F095 | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 30V 5.2A 6-SS... |
FDC640P_F095 | ON Semicondu... | 0.0 $ | 1000 | MOSFET P-CH 20V 4.5A 6-SS... |
FDC645N_F095 | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 30V 5.5A 6-SS... |
FDC655AN | ON Semicondu... | -- | 1000 | MOSFET N-CH 30V 6.3A 6-SS... |
FDC697P | ON Semicondu... | -- | 1000 | MOSFET P-CH 20V 8A 6-SSOP... |
FDC699P_F077 | ON Semicondu... | 0.0 $ | 1000 | MOSFET P-CH 20V 7A 6-SSOT... |
FDC633N | ON Semicondu... | -- | 1000 | MOSFET N-CH 30V 5.2A SSOT... |
FDC697P_F077 | ON Semicondu... | 0.0 $ | 1000 | MOSFET P-CH 20V 8A SSOT-6... |
FDC699P | ON Semicondu... | 0.0 $ | 1000 | MOSFET P-CH 20V 7A SSOT-6... |
FDC642P_SB4N006 | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH SSOT6 |
FDC655BN_NBNN007 | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 30V 6.3A SUPE... |
FDC638P | ON Semicondu... | -- | 990 | MOSFET P-CH 20V 4.5A SSOT... |
FDC640P | ON Semicondu... | -- | 1000 | MOSFET P-CH 20V 4.5A SSOT... |
FDC654P | ON Semicondu... | -- | 1000 | MOSFET P-CH 30V 3.6A SSOT... |
FDC604P | ON Semicondu... | -- | 1000 | MOSFET P-CH 20V 5.5A SSOT... |
FDC610PZ | ON Semicondu... | -- | 1000 | MOSFET P-CH 30V 4.9A SSOT... |
FDC658P | ON Semicondu... | -- | 1000 | MOSFET P-CH 30V 4A SSOT-6... |
FDC653N | ON Semicondu... | -- | 20000 | MOSFET N-CH 30V 5A SSOT-6... |
FDC645N | ON Semicondu... | -- | 1000 | MOSFET N-CH 30V 5.5A SSOT... |
FDC6000NZ | ON Semicondu... | -- | 1000 | MOSFET 2N-CH 20V 7.3A 6SS... |
FDC6020C | ON Semicondu... | -- | 1000 | MOSFET N/P-CH 20V 6SSOTMo... |
FDC6036P | ON Semicondu... | -- | 1000 | MOSFET 2P-CH 20V 5A 6SSOT... |
FDC6322C | ON Semicondu... | -- | 1000 | MOSFET N/P-CH 25V SSOT-6M... |
FDC6432SH | ON Semicondu... | 0.0 $ | 1000 | MOSFET N/P-CH 30V/12V SSO... |
FDC6000NZ_F077 | ON Semicondu... | 0.0 $ | 1000 | MOSFET 2N-CH 20V 7.3A 6-S... |
FDC6020C_F077 | ON Semicondu... | 0.0 $ | 1000 | MOSFET N/P-CH 20V 6-SSOPM... |
FDC6036P_F077 | ON Semicondu... | 0.0 $ | 1000 | MOSFET 2P-CH 20V 5A 6SSOT... |
FDC637BNZ | ON Semicondu... | -- | 3000 | MOSFET N-CH 20V 6.2A 6-SS... |
FDC638APZ | ON Semicondu... | -- | 920 | MOSFET P-CH 20V 4.5A SSOT... |
FDC658AP | ON Semicondu... | -- | 3000 | MOSFET P-CH 30V 4A SSOT6P... |
FDC634P | ON Semicondu... | -- | 3000 | MOSFET P-CH 20V 3.5A SSOT... |
FDC642P-F085 | ON Semicondu... | 0.15 $ | 1000 | MOSFET P-CH 20V 4A 6SSOTP... |
FDC6301N_G | ON Semicondu... | 0.0 $ | 1000 | MOSFET 2 N-CH 25V SUPERSO... |
FDC6301N | ON Semicondu... | -- | 1000 | MOSFET 2N-CH 25V 0.22A SS... |
FDC6304P | ON Semicondu... | -- | 1000 | MOSFET 2P-CH 25V 0.46A SS... |
FDC642P | ON Semicondu... | -- | 1000 | MOSFET P-CH 20V 4A SSOT-6... |
FDC608PZ | ON Semicondu... | -- | 1000 | MOSFET P-CH 20V 5.8A SSOT... |
FDC606P | ON Semicondu... | -- | 1000 | MOSFET P-CH 12V 6A SSOT-6... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...