Allicdata Part #: | FDC642P-F085TR-ND |
Manufacturer Part#: |
FDC642P-F085 |
Price: | $ 0.15 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 20V 4A 6SSOT |
More Detail: | P-Channel 20V 4A (Ta) 1.2W (Ta) Surface Mount Supe... |
DataSheet: | FDC642P-F085 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.14026 |
Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
Package / Case: | SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package: | SuperSOT™-6 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.2W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 640pF @ 10V |
Vgs (Max): | ±8V |
Gate Charge (Qg) (Max) @ Vgs: | 16nC @ 4.5V |
Series: | Automotive, AEC-Q101, PowerTrench® |
Rds On (Max) @ Id, Vgs: | 65 mOhm @ 4A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 4A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The FDC642P-F085 is a type of field-effect transistor, otherwise known as a FET, or a metal-oxide-semiconductor field-effect transistor (MOSFET). It is a single-transistor device which performs a range of important tasks related to the transmission and reception of electrical signals. As a result of its numerous applications, it is a very common and widely used type of transistor.
The FDC642P-F085 is primarily used in amplifier and switching circuits. Its most common application is in amplifying the output from a microphone. In this case, the FDC642P-F085 is typically placed after the microphone\'s pre-amplifier stage, before the post-amplifier stage which results in a higher-level output. This type of transistor is also used in switching circuits, which allow for the conversion of low-frequency analog signals into digital signals for purposes such as data communication.
In addition to its uses in amplifier and switching circuits, the FDC642P-F085 can also be used in pulse-width modulation (PWM) applications. This type of modulation is used to control the speed and torque of motors, as well as the brightness of LEDs. The FDC642P-F085 is able to control the PWM signals, thus enabling precise control over the speed and torque of motors and the brightness of LEDs.
The FDC642P-F085 has a variety of important features which make it well-suited to its various roles. These include a fast response time of 2 μs, a maximum drain current of 5.0 A, and a high junction temperature rating of 175°C. Additionally, it has a drain-source voltage rating of 45 V and a gate-source voltage rating of 10 V.
The FDC642P-F085\'s working principle is determined by its structure. As with all other MOSFETs, the FDC642P-F085 is composed of two distinct layers of metal and oxide which are separated by a gate electrode. When a voltage is applied to the gate-source junction, the electrons in the oxide layer become excited and form a conductive channel between the source and drain. This allows current to flow through the device and enables it to be used in amplifying or switching circuits.
The FDC642P-F085 is an invaluable part of circuits used to amplify and switch electrical signals, control the speed and torque of motors and the brightness of LEDs, and enable the transition of low-frequency analog signals into digital signals. It offers the advantages of having a fast response time, a high maximum drain current, and a high junction temperature rating. It is well-equipped to handle its various duties thanks to its structured gate-source junction and oxide layer, as well as its drain-source voltage and gate-source voltage ratings.
The specific data is subject to PDF, and the above content is for reference
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