Allicdata Part #: | FDC6303NTR-ND |
Manufacturer Part#: |
FDC6303N |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET 2N-CH 25V 0.68A SSOT6 |
More Detail: | Mosfet Array 2 N-Channel (Dual) 25V 680mA 700mW Su... |
DataSheet: | FDC6303N Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 25V |
Current - Continuous Drain (Id) @ 25°C: | 680mA |
Rds On (Max) @ Id, Vgs: | 450 mOhm @ 500mA, 4.5V |
Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 2.3nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 50pF @ 10V |
Power - Max: | 700mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package: | SuperSOT™-6 |
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FDC6303N is a type of transistor array which is designed specifically for use in power circuits. It is an enhancement-mode device which has a positive Vgs(off) and an excellent Rds(on) characteristic for good current handling and power dissipation properties. The device consists of three identical FETs housed in a single package and connected in parallel, each with its own gate, source, and drain. This allows the device to be used in applications requiring both high and low current draw.
The primary use of the FDC6303N is in applications such as power supplies, motor control, and other power circuits. It is also used in some audio amplifiers and power switching circuits. The device functions by having two inputs connected to the gate of each of the three FETs in the array. These inputs can be either P-type or N-type, depending on the device and application. The output of each FET will depend on the voltage applied to its gate, allowing the device to be used as a solid state switch. When the gate is connected to ground, the FET will be in a non-conducting state, with a low-resistance path between the source and drain. When the gate is connected to a positive voltage, the FET will be in a conducting state, with a high-resistance path between the source and drain.
Due to the wide range of applications for which the FDC6303N can be used, it is important to consider the effects of any parameters involved in the calculations of the device\'s performance. These parameters include such variables as drain-source on-resistance, gate-source voltage, drain-source voltage, gate charge voltage, and gate charge current. All these parameters must be calculated carefully to ensure the maximum efficiency and performance of the device.
The FDC6303N also has excellent heat spreader capability for multiple packages, making it ideal for applications such as heatsinks and other passive cooling techniques. It is also designed with a low power dissipation to reduce unwanted heat generation during operation. The device is also ESD protected, which makes it suitable for use in harsh environmental conditions.
Overall, the FDC6303N is a versatile transistor array that can be used in a number of different applications. Its low Rds(on) characteristic and excellent thermal spreader capability make it an ideal choice for power circuits. It is also able to provide protection against ESD damage, which makes it suitable for use in harsh environmental conditions. With its wide range of applications and parameters that must be calculated carefully, the FDC6303N will surely continue to be an important device on the market.
The specific data is subject to PDF, and the above content is for reference
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