FDW2501NZ

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FDW2501NZ is an array of N-channel enhancement Power Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) designed to switch in 3-phase WYE configuration motor drives. The device offers low on-resistance, very high-current capability, good noise immunity and reduced power consumption. It incorporates gate protection against damaging gate voltage transients which can be caused by EMC events. This array also features overcurrent protection and short-circuit protection with built-in thermal shutdown and through current limitation.

FDW2501NZ is offered in three different packages: SOIC, TSSOP and HVDSO. It is fully compatible with the N-channel FDW MOSFET family, thus allowing the user’s design to use the same product family in different applications. This allows designers to use the same technology to reduce their development costs.

The FDW2501NZ array is well-suited for motor control and actuation duties, as well as in power supplies, DC-DC converters, home automation systems and HVAC/lighting controls. This array provides a reduced system cost due to its high integration and design flow flexibility. It is designed to operate from 10V to 120V operation and is rated for an operating temperature range of -40°C to 125°C.

The FDW2501NZ array is an advanced member of NXP\'s MOSFET technology family. Its switching performance features include fast switching times, low on-state resistance, high current capability, and high capacitance ratings. The array is designed with a trench MOSFET process, which provides improved reliability and low power consumption. It also has a low noise impedance characteristic, making it suitable for noise-sensitive applications. The array\'s overall design allows for a reduction in PCB area, as well as a reduction in component count due to the high number of devices in the array.

The working principle of FDW2501NZ is based on the principle of voltage control of current. It employs an N-channel MOSFET to control the flow of current. The gate voltage controls the current flow by modulating the voltage across a reverse-biased diode. When the gate voltage increases, the current flow increases and when the gate voltage decreases, the current flow decreases. The FET operates in the linear region at Vgs near 0V and beyond Vgs near the threshold voltage Vth, it operates mostly in the saturated region. So, when the gate voltage is sufficiently more than the Vth, the FET will be in the cut-off region and the current will stop. In other words, when the gate voltage is less than Vth, the current flows and when it is more than Vth, there will be no current flow.

FDW2501NZ array has several advantages, including lower power consumption, better noise isolation and improved thermal dissipation due to fewer devices on a single chip. The device also incorporates protective features like overcurrent protection, thermal shutdown and gate protection for improved reliability. The array is also well-suited for motor control and actuation duties, as well as for power supplies, home automation systems and HVAC/lighting controls.

In conclusion, FDW2501NZ is an array of N-channel MOSFETs designed to switch in 3-phase WYE configuration motor drives. It provides a reduced system cost due to its high integration and design flow flexibility, and its switching performance features include fast switching times, low on-state resistance and high current capability. Additionally, it incorporates a number of protective features such as gate protection, overcurrent protection and short-circuit protection. Thus, FDW2501NZ array is highly suitable for various applications such as motor control, power supplies, DC/DC converters and home automation systems.

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