Allicdata Part #: | FDW2511NZ-ND |
Manufacturer Part#: |
FDW2511NZ |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET 2N-CH 20V 7.1A 8TSSOP |
More Detail: | Mosfet Array 2 N-Channel (Dual) Common Drain 20V 7... |
DataSheet: | FDW2511NZ Datasheet/PDF |
Quantity: | 1000 |
Series: | PowerTrench® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | 2 N-Channel (Dual) Common Drain |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 7.1A |
Rds On (Max) @ Id, Vgs: | 20 mOhm @ 7.1A, 4.5V |
Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 17.3nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 1000pF @ 10V |
Power - Max: | 1.6W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-TSSOP (0.173", 4.40mm Width) |
Supplier Device Package: | 8-TSSOP |
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The FDW2511NZ is a field-effect transistor array for low noise, low distortion, and low power circuit applications. It is a monolithic array of five N-channel, enhancement-mode, field-effect transistors (FETs) with a common source, gate, and drain connection. Each FET cell is independently biased and has its own gate and drain connection. This flexibility provides an easy way to build complex circuitry with fewer components and smaller size.
The FDW2511NZ has been designed specifically to provide low noise, low distortion, and low power circuit solutions for demanding applications. The FET array can be used in non-inverting, inverting, and linear configurations. It is easily configured to operate with a variety of signal sources, including AC and DC. This makes it ideal for use in audio applications such as signal amplification, mixing, and equalization. It is also suitable for low noise signal switching, low noise communications, and power management.
The FDW2511NZ utilizes a depletion-mode MOSFET architecture. This allows for low input impedance and a faster turn-on time than in enhancement-mode FETs. The bipolar gate model offers higher gate voltage thresholds, making it ideal for high-side switches. Additionally, the gate-source capacitance of the FDW2511NZ is lower than many other field-effect arrays, which helps reduce distortion and preserve signal integrity.
The FDW2511NZ is constructed using silicon on-insulator (SOI) technology and a single-poly process. This provides higher performance and superior reliability compared to traditional field-effect transistor arrays. The FET array also has protections built in to prevent overvoltage and overtemperature damage, ensuring maximum reliability. The integrated passive components such as the gate-source resistors provide for simple and straightforward design.
In summary, the FDW2511NZ offers a high-performance, low power, and low noise alternative for a wide range of applications. Its simple design and flexible configuration makes it ideal for many audio, signal switching, and power management applications. Furthermore, its small size, reliability, and low cost make it a popular choice among circuit designers.
The specific data is subject to PDF, and the above content is for reference
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