FDW254P

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The FDW254P is a single-channel, low-drain silicon field-effect transistor (FET) made by Fairchild Semiconductor. As such, it is designed to be used in low-power switching applications, such as logic circuits, power management, and audio amplifying. The FDW254P is particularly notable for its ability to handle a wide range of voltage operating forward drain-source (VDS) in its on state.

OperatingCharacteristics

The FDW254P is designed to transition from its on state to its off state with a very low forward drain-source (VDS) and reverse drain-source (VGS) voltage. It is capable of operating with a VGS angular magnitude as low as -1.2 volts, making it ideal for applications where power savings are paramount. A VDS of between 0 and 40 volts is required to drive the FDW254P into its own state, while a VGS of between -2 and -12 volts is necessary to maintain the device in its off state.

The FDW254P is also designed with a very low gate leakage current (IG) to ensure a low power drain in its off state. This allows the trigger voltage to be kept at a low level, reducing the chances of false triggering. Additionally, the device features a low gate capacitance for fast switching and excellent thermal and avalanche energy performance.

Applications

Given its low power drain and excellent operational characteristics, the FDW254P is widely used in logic circuits, power management, and audio amplifying applications. The device is well suited for use in battery-operated devices, since the low gate leakage current keeps the battery drain to a minimum. Additionally, its ability to handle large VDS and VGS ratios makes it ideal for switching applications such as motor control or input stage circuits.

The FDW254P is also used in high frequency circuits due to its low gate capacitance and excellent thermal and avalanche energy performance. Additionally, it is used in low voltage circuits, where its wide VDS and VGS ratios make it an excellent choice for driving circuits into and out of their active modes.

Working Principle

The FDW254P operates on the principle of negative resistance. In its off state, the device presents a high resistance between its drain and source. When a current is applied to its gate, however, this resistance decreases and allows the current to flow freely through the device. This process forms a basis for the FDW254P\'s operational characteristics. The device can be triggered into its off state by either a VGS angular magnitude reaching -1.2 volts, or by reducing the VDS to 0 volts.

When the FDW254P is in its off state, the gate voltage controls the resistance between its drain and source, allowing current to flow freely through the device. This capability makes the device ideal for use in low power, high frequency, and input stage circuits.

Conclusion

The FDW254P is a single-channel, low-drain silicon field-effect transistor (FET) available from Fairchild Semiconductor. The device is designed to transition quickly and reliably from its on state to its off state with a very low forward drain-source (VDS) and reverse drain-source (VGS) voltage. It is particularly notable for its ability to handle a wide range of voltage operating VDS, making it ideal for applications where power savings are key.

Given its low gate capacitance, low gate leakage current, and excellent thermal and avalanche energy performance, the FDW254P is widely used in logic circuits, power management, and audio amplifying applications. Its wide VDS and VGS ratios also make it suitable for use in high frequency, low voltage, and battery-operated circuits.

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