FDW2512NZ Allicdata Electronics
Allicdata Part #:

FDW2512NZ-ND

Manufacturer Part#:

FDW2512NZ

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET 2N-CH 20V 6A 8-TSSOP
More Detail: Mosfet Array 2 N-Channel (Dual) 20V 6A 1.6W Surfac...
DataSheet: FDW2512NZ datasheetFDW2512NZ Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: PowerTrench®
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A
Rds On (Max) @ Id, Vgs: 28 mOhm @ 6A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 10V
Power - Max: 1.6W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP
Description

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The FDW2512NZ is a highly advanced field-effect transistor (FET) array consisting of two N-channel enhancement-mode MOSFETs integrated in a single package. This powerful device provides an efficient solution for a wide variety of switching applications and gives engineers the flexibility to easily customize their design. It is designed to provide better performance than standard MOSFETs in most applications.

The FDW2512NZ array offers a wide range of features and benefits for engineers working with design and power management. Its switching speed is fast and reliable, with on-resistance values as low 2.2mohms. This low value ensures superior power efficiency during operation. Additionally, the FDW2512NZ features protection circuits against inrush current, electrostatic discharge (ESD), and reverse gate voltage, making it a perfect choice for robust applications. Furthermore, the device\'s integration of dual N-channel MOSFETs can increase design efficiency, as engineers are no longer required to use two separate components.

The FDW2512NZ can be used in a variety of applications, such as power management, DC-DC converters, motor control, and audio amplifiers. In power management applications, the device can be used to control the power flow between circuits, enabling engineers to increase efficiency and reduce power losses. In motor control applications, it can offer precise control of motor torque and speed. Additionally, in audio amplifier applications, the device can offer superior sound quality by reducing distortion and noise.

The working principle of the FDW2512NZ is based upon the MOSFETs contained within the device. MOSFETs, or metal-oxide-semiconductor field-effect transistors, are three-terminal voltage-controlled devices developed for use in digital and analog circuitry. In the FDW2512NZ, the two MOSFETs are integrated together in a common package, allowing them to be used as a unitary device. By applying a voltage to the control terminal (gate), the device can be enabled (turned ON) by allowing the flow of current in the source to drain path. Conversely, disabling the device (turning it OFF) is done by removing the voltage from the gate terminal.

The FDW2512NZ is a great choice for anyone looking to leverage the power of an advanced FET array. With its wide range of features and benefits, reliable performance, and integrated design, it is sure to be an attractive choice for any application requiring switching and control.

The specific data is subject to PDF, and the above content is for reference

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