Allicdata Part #: | FDW2504P-ND |
Manufacturer Part#: |
FDW2504P |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET 2P-CH 20V 3.8A 8-TSSO |
More Detail: | Mosfet Array 2 P-Channel (Dual) 20V 3.8A 600mW Sur... |
DataSheet: | FDW2504P Datasheet/PDF |
Quantity: | 1000 |
Series: | PowerTrench® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | 2 P-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 3.8A |
Rds On (Max) @ Id, Vgs: | 43 mOhm @ 3.8A, 4.5V |
Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 16nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 1030pF @ 10V |
Power - Max: | 600mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-TSSOP (0.173", 4.40mm Width) |
Supplier Device Package: | 8-TSSOP |
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The FDW2504P is an array of four N-Channel enhancement mode MOSFETs that are manufactured in a single monolithic die. This device is designed to provide a low on-resistance through the central portion of the transistor, while still having high enough breakdown voltages to be suitable for medium voltage applications. The FDW2504P is suitable for use in various analog and RF applications such as supply switching, power supply regulators, power MOSFET drivers, and audio amplifiers.
The FDW2504P combines a high switching speed with a high input capacitance. The on-resistance of the FDW2504P is 0.06 Ohms, which is lower than other MOSFET arrays used in similar applications. Furthermore, the FDW2504P has a gate charge of 4.2 nC, and a maximum gate-source voltage of 20V which makes it suitable for applications that require high gate input voltages.
The FDW2504P has a high current handling capability with a maximum drain current of 9A, and a maximum drain-source voltage of 600V making it appropriate for power switching applications. Other features of the FDW2504P include a high thermal resistance, a low gate-source capacitance and a high input impedance. In addition, the FDW2504P has an operating temperature range of -35°C to +85°C and is RoHS Compliant.
In terms of its operating principle, the FDW2504P works by using its N-Channel MOSFETs to create a low on-resistance path for current to flow through the transistor array. The flow of current can be controlled by applying a voltage to the gate of the MOSFET which will open or close the transistor depending on the voltage that is applied. The FDW2504P has an on-resistance of 0.06 ohms, meaning that low amounts of current can be controlled with relatively low voltage input signals.
The FDW2504P can be used in various applications from power supply control and switching, to driver circuits and audio amplifiers. Due to its low on-resistance and high peak current capabilities, the FDW2504P is ideal for applications such as switching power supplies, DC-DC converters, motor control circuits and audio amplifiers. Furthermore, due to its good thermal conductivity and low gate-source capacitance, the FDW2504P can also be used in RF and analog applications.
The FDW2504P is a versatile device that is perfect for applications that require medium voltage and low on-resistance. The device is well-suited for power supply control and switching, driver circuits, audio amplifiers and RF and analog applications. Its low on-resistance and high peak current capabilities make it an ideal choice for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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