FDW2506P Allicdata Electronics
Allicdata Part #:

FDW2506P-ND

Manufacturer Part#:

FDW2506P

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET 2P-CH 20V 5.3A 8-TSSO
More Detail: Mosfet Array 2 P-Channel (Dual) 20V 5.3A 600mW Sur...
DataSheet: FDW2506P datasheetFDW2506P Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: PowerTrench®
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.3A
Rds On (Max) @ Id, Vgs: 22 mOhm @ 5.3A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1015pF @ 10V
Power - Max: 600mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP
Description

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The FDW2506P is a type of transistor array found in integrated circuit devices. It can be used for power switching applications, voltage regulation, and other types of gate and level control. There are many different types of transistor arrays and each one can be used for different applications. This article will discuss the FDW2506P transistor array and its specific applications as well as its working principle.

The FDW2506P is a high-power, high-speed transistor array, often used in power switching applications and voltage regulation. This transisor array is made up of two FETs (Field Effect Transistors), one of which is a N-channel device and the other is a P-channel device. The two FETs are connected to each other, allowing them to act as a single device.

The FDW2506P can be used for any application requiring high-power switching, such as power amplifiers, high-power switching, and voltage regulation. It has a relatively low input impedance, meaning it needs to be matched to the load to achieve optimal performance. This can be done by selecting the appropriate resistor and capacitor values to match the FDW2506P\'s output impedance.

The FDW2506P\'s working principle is based on the concept of \'field effect\'. This is a type of electrical phenomenon where a voltage applied to a gate electrode will create an electrical effect (in this case, a current-voltage flow) within a semiconductor device. When a gate voltage is applied, the characteristics of the MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) change, allowing current to flow through the drain and source connections.

In the FDW2506P, the current flow is controlled by applying a voltage to the gate of one of the FETs. As the gate voltage increases, more current will flow, and as the gate voltage decreases, less current will flow. By controlling the gate voltage, the current can be regulated, allowing for precision control over power switching applications.

The FDW2506P is a versatile transistor array with a wide range of applications. It can be used for power switching, voltage regulation, and other types of gate and level control. The device is relatively small compared to other power switching transistors, making it perfect for use in portable electronics.

In conclusion, the FDW2506P is a powerful transistor array with a wide range of applications. It can be used for power switching, voltage regulation, and other types of gate and level control. Its working principle is based on the concept of \'field effect\', which allows the device to be controlled with a simple gate voltage. The small size of the FDW2506P makes it ideal for use in portable electronics.

The specific data is subject to PDF, and the above content is for reference

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