Allicdata Part #: | FDW2506P-ND |
Manufacturer Part#: |
FDW2506P |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET 2P-CH 20V 5.3A 8-TSSO |
More Detail: | Mosfet Array 2 P-Channel (Dual) 20V 5.3A 600mW Sur... |
DataSheet: | FDW2506P Datasheet/PDF |
Quantity: | 1000 |
Series: | PowerTrench® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | 2 P-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 5.3A |
Rds On (Max) @ Id, Vgs: | 22 mOhm @ 5.3A, 4.5V |
Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 34nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 1015pF @ 10V |
Power - Max: | 600mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-TSSOP (0.173", 4.40mm Width) |
Supplier Device Package: | 8-TSSOP |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
:The FDW2506P is a type of transistor array found in integrated circuit devices. It can be used for power switching applications, voltage regulation, and other types of gate and level control. There are many different types of transistor arrays and each one can be used for different applications. This article will discuss the FDW2506P transistor array and its specific applications as well as its working principle.
The FDW2506P is a high-power, high-speed transistor array, often used in power switching applications and voltage regulation. This transisor array is made up of two FETs (Field Effect Transistors), one of which is a N-channel device and the other is a P-channel device. The two FETs are connected to each other, allowing them to act as a single device.
The FDW2506P can be used for any application requiring high-power switching, such as power amplifiers, high-power switching, and voltage regulation. It has a relatively low input impedance, meaning it needs to be matched to the load to achieve optimal performance. This can be done by selecting the appropriate resistor and capacitor values to match the FDW2506P\'s output impedance.
The FDW2506P\'s working principle is based on the concept of \'field effect\'. This is a type of electrical phenomenon where a voltage applied to a gate electrode will create an electrical effect (in this case, a current-voltage flow) within a semiconductor device. When a gate voltage is applied, the characteristics of the MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) change, allowing current to flow through the drain and source connections.
In the FDW2506P, the current flow is controlled by applying a voltage to the gate of one of the FETs. As the gate voltage increases, more current will flow, and as the gate voltage decreases, less current will flow. By controlling the gate voltage, the current can be regulated, allowing for precision control over power switching applications.
The FDW2506P is a versatile transistor array with a wide range of applications. It can be used for power switching, voltage regulation, and other types of gate and level control. The device is relatively small compared to other power switching transistors, making it perfect for use in portable electronics.
In conclusion, the FDW2506P is a powerful transistor array with a wide range of applications. It can be used for power switching, voltage regulation, and other types of gate and level control. Its working principle is based on the concept of \'field effect\', which allows the device to be controlled with a simple gate voltage. The small size of the FDW2506P makes it ideal for use in portable electronics.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
FDW262P | ON Semicondu... | -- | 1000 | MOSFET P-CH 20V 4.5A 8-TS... |
FDW254P | ON Semicondu... | -- | 1000 | MOSFET P-CH 20V 9.2A 8-TS... |
FDW252P | ON Semicondu... | -- | 1000 | MOSFET P-CH 20V 8.8A 8-TS... |
FDW254PZ | ON Semicondu... | -- | 1000 | MOSFET P-CH 20V 9.2A 8-TS... |
FDW264P | ON Semicondu... | -- | 1000 | MOSFET P-CH 20V 9.7A 8-TS... |
FDW258P | ON Semicondu... | -- | 1000 | MOSFET P-CH 12V 9A 8-TSSO... |
FDW256P | ON Semicondu... | -- | 1000 | MOSFET P-CH 30V 8A 8-TSSO... |
FDW2520C | ON Semicondu... | -- | 1000 | MOSFET N/P-CH 20V 6A/4.4A... |
FDW2512NZ | ON Semicondu... | -- | 1000 | MOSFET 2N-CH 20V 6A 8-TSS... |
FDW2511NZ | ON Semicondu... | -- | 1000 | MOSFET 2N-CH 20V 7.1A 8TS... |
FDW2510NZ | ON Semicondu... | 0.0 $ | 1000 | MOSFET 2N-CH 20V 6.4A 8TS... |
FDW2501NZ | ON Semicondu... | -- | 1000 | MOSFET 2N-CH 20V 5.5A 8TS... |
FDW2516NZ | ON Semicondu... | -- | 1000 | MOSFET 2N-CH 20V 5.8A 8TS... |
FDW2601NZ | ON Semicondu... | -- | 1000 | MOSFET 2N-CH 30V 8.2A 8TS... |
FDW2501N | ON Semicondu... | -- | 1000 | MOSFET 2N-CH 20V 6A 8-TSS... |
FDW2503N | ON Semicondu... | -- | 1000 | MOSFET 2N-CH 20V 5.5A 8TS... |
FDW2504P | ON Semicondu... | -- | 1000 | MOSFET 2P-CH 20V 3.8A 8-T... |
FDW2508P | ON Semicondu... | -- | 1000 | MOSFET 2P-CH 12V 6A 8-TSS... |
FDW2507NZ | ON Semicondu... | -- | 1000 | MOSFET 2N-CH 20V 7.5A 8-T... |
FDW2507N | ON Semicondu... | -- | 1000 | MOSFET 2N-CH 20V 7.5A 8-T... |
FDW2521C | ON Semicondu... | -- | 1599 | MOSFET N/P-CH 20V 8-TSSOP... |
FDW2506P | ON Semicondu... | -- | 1000 | MOSFET 2P-CH 20V 5.3A 8-T... |
FDW2502P | ON Semicondu... | -- | 1000 | MOSFET 2P-CH 20V 4.4A 8-T... |
FDW2503NZ | ON Semicondu... | -- | 1000 | MOSFET 2N-CH 20V 5.5A 8TS... |
FDW2508PB | ON Semicondu... | -- | 1000 | MOSFET 2P-CH 12V 6A 8-TSS... |
MOSFET 2N-CH 30V 8AMosfet Array 2 N-Chan...
MOSFET 2N-CH 40V 6A 8PWRPAKMosfet Array ...
MOSFET 2P-CH 30V 5.8A 8SOICMosfet Array ...
MOSFET 2N-CH 80V 1.1A 8SOICMosfet Array ...
MOSFET 2N-CH 56LFPAKMosfet Array
MOSFET 2N-CH 30V 8SOICMosfet Array 2 N-C...