FDW252P

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The FDW252P is a single N-channel enhancement mode power field effect transistor developed by Shenzhen Marstrand Electronics Ltd. This device is specifically designed for use in various industrial applications which require an efficient switching between power and control signals. FDW252P transistors are most often used in power MOSFET related applications such as switching power supplies, high-speed motor control and power amplifiers.

FDW252P Application Field

The FDW252P has an avalanche energy rating of 860 mJ, which allows it to handle high peak currents and large input pulses with ease. It is also capable of switching loads up to 40W. The device has a maximum drain-source voltage (VDS) of 55V, drain-source on-resistance (RDSon) of 80mΩ, gate-source voltage range of -3V to 20V, and a maximum gate threshold voltage (VGS) of 2V. Other features of the device include a high-speed switching capability with a maximum drain-source current (ID) of 8A and a low gate-drain charge (Qg) of 35nC.

Due to its high-efficiency and robust design, the FDW252P is widely used in automotive and consumer electronics. It can be used in applications such as power management, motor control, LED dimming and backlight dimming, power amplifiers, automotive systems, and lighting systems. In addition, the device is also used in low-side switch configurations in applications like high-voltage motor drives and power management in portable devices.

FDW252P Working Principle

The FDW252P is a metal–oxide–semiconductor field-effect transistor (MOSFET) which utilizes a gate voltage (VGS) to control the current flow between its drain and source terminals. The MOSFET works on the principle of electronic charge movement by applying a voltage between the source and the gate, and then making a channel between the source and drain. This is known as the “FET principle” or the “field effect”.

When an applied voltage (VGS) is present between the source and the gate, the source–drain current (ID) increases. This is due to the fact that the applied voltage creates an electric field across the GPIO (gate-source-drain) region, which enables the electrons to move from the source to the drain without having to travel through the gate. As a result, the drain–source current increases.

As the voltage increases, the electrons move faster, and thus, the drain-source current increases at a faster rate. With a sufficiently high gate voltage, electrons will flow freely in all directions, creating a short circuit between source and drain. As the drain–source current increases, the device dissipates more power and higher VGS must be applied to maintain the current. When the power dissipation is too large for a particular circuit, overcurrent protection circuits must be implemented.

The FDW252P uses a low gate-drain charge (Qg), compared to other MOSFET products. This allows for a quicker switching time and a more efficient design. The device also has a low current driven capability and low on-resistance which result in a smaller power loss. The device is also protected from electrostatic discharge (ESD) damage, ensuring a longer operating life.

Conclusion

The FDW252P is a single N-channel enhancement mode power field-effect transistor designed for industrial applications which require efficient switching between power and control signals. Its avalanche energy rating of 860 mJ, maximum drain-source voltage of 55V, drain-source on-resistance of 80mΩ, gate-source voltage range of -3V to 20V, and low gate-drain charge of 35nC make this device suitable for a variety of power MOSFET related applications. The device works on the principle of electronic charge movement, and its low gate-drain charge allows for quicker switching times and a more efficient design. Its low current drive capability and low on-resistance result in a lower power loss, and the device is also protected from ESD damage, ensuring a longer operating life.

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