Allicdata Part #: | FDW264P-ND |
Manufacturer Part#: |
FDW264P |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 20V 9.7A 8-TSSOP |
More Detail: | P-Channel 20V 9.7A (Ta) 1.3W (Ta) Surface Mount 8-... |
DataSheet: | FDW264P Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 9.7A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs: | 10 mOhm @ 9.7A, 4.5V |
Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 135nC @ 5V |
Vgs (Max): | ±12V |
Input Capacitance (Ciss) (Max) @ Vds: | 7225pF @ 10V |
FET Feature: | -- |
Power Dissipation (Max): | 1.3W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-TSSOP |
Package / Case: | 8-TSSOP (0.173", 4.40mm Width) |
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FDW264P (Field-effect Transistor, FET) is a type of transistor commonly used in electronic circuits, which functions to control the current flow in a circuit by changing the electrical resistance. The FDW264P is a single FET device, made of silicon and designed to handle relatively high currents up to 10A and voltages up to 60V when switching. The FDW264P is available in a four-pin configuration, with three pins forming the drain, the source and the gate.
The FDW264P application field includes power management, DC motor control, video buffer amplifier, DC-DC switching and speed regulation, PWM frequency as well as speed adjustment for HVAC (heating and ventilation air conditioning) systems. Most of these applications require high control responsiveness and energy conservation. The FDW264P can provide all of these features in a simple and cost effective solution.
The working principle of the FDW264P is based on the basic design of a FET. It works on the principle of the MOSFET (Metal Oxide Semiconductor FET) with the differences being that the FDW264P is capable of switching faster and can handle higher voltages and currents. A FET is composed of an array of transistors, made up of three components: the drain, the source, and the gate. The electrons (or “gate”) flow between the drain and the source through the depletion layer. Depending on the magnitude of the terminal voltage, the FET can be in conducting state or in blocking state.
The FDW264P works in accordance with the same principle. It has a series of three P-type and N-type MOSFETs arranged side by side between the drain and source. When voltage is applied to the gate terminal, an electric field is generated which affects the N and P MOSFETs, resulting in a controlled passage of current. This electric field can be controlled by manually adjusting the gate voltage, which therefore regulates the current that passes through the FET.
The FDW264P also features high speed switching and no body-effect. Its maximum operating frequency has been benchmarked at 1MHz and can even be as high as 1.2MHz. Its low channel capacitance and low resistance also makes it very suitable for power saving applications. Furthermore, it has low on-state and off-state leakage current. This ensures that the FDW264P does not consume too much power and therefore does not produce unwanted heat.
In conclusion, the FDW264P is a single FET device, designed to provide high speed switching and low leakage current, as well as low channel capacitance and low resistance. It is suitable for a wide range of applications, such as power management, DC motor control, video buffer compressor, frequency modulation and speed adjustment for HVAC systems. It works based on the principle of the MOSFET to regulate the current that passes through it.
The specific data is subject to PDF, and the above content is for reference
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