Allicdata Part #: | FDW2507NZ-ND |
Manufacturer Part#: |
FDW2507NZ |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET 2N-CH 20V 7.5A 8-TSSOP |
More Detail: | Mosfet Array 2 N-Channel (Dual) 20V 7.5A 1.1W Surf... |
DataSheet: | FDW2507NZ Datasheet/PDF |
Quantity: | 1000 |
Series: | PowerTrench® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 7.5A |
Rds On (Max) @ Id, Vgs: | 19 mOhm @ 7.5A, 4.5V |
Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 28nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 2152pF @ 10V |
Power - Max: | 1.1W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-TSSOP (0.173", 4.40mm Width) |
Supplier Device Package: | 8-TSSOP |
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The FDW2507NZ is a dual FET array breakthrough in the field of FETs and MOSFETs. It is specifically designed to improve the switching speed of high-speed logic circuits and is an ideal solution for high-speed logic switching. Additionally, it features a low on-resistance value to minimize power losses and maintain lower operating temperatures.
This dual array FET device is composed of two p-channel MOSFETs that are electrically separated. Both are operated in the enhancement mode with a single gate voltage control. On the one hand, the first MOSFET has an N-channel drain region connected to the source terminal while the second one features a P-channel drain region connected to the source terminal. Both transistors are also connected by a common source, gate and drain terminals. By connecting all three terminals of the array, the operation of either MOSFET can be fully controlled with a single gate voltage.
The FDW2507NZ offers many advantages over traditional FETs and MOSFETs. Since the device can function as an independent dual array FET, it allows for faster switching speeds than a single FET device. This is due to the fact that both MOSFETs share the same source, gate and drain terminal and are operated in tandem, effectively setting two separate channels to treat information. This results in faster switching times and greater drive strength than would be possible with a single array FET.
In terms of applications, the FDW2507NZ can be used in a range of high-speed logic circuits, including logic-level shifting, logic switching, multiplexing, and data buffering. It is also used to control linear and switching power supplies, as well as to drive high-frequency switching applications. Additionally, the device can also be used to power up voltage controllers, DC motors, and switching circuits.
The FDW2507NZ also offers an excellent working principle for efficient operation. Its innovative design provides a high-voltage gain and low on-resistance. This is primarily achieved by its impressive MOSFET technology, which allows for higher device speed, greater performance, and improved efficiency. Moreover, the device offers excellent thermal management due to its low on-resistance as it keeps the FETs operating at lower temperatures compared to standard devices.
Overall, the FDW2507NZ is an exceptional breakthrough in the field of FETs and MOSFETs. The dual array FET’s superior design and superior working principle offer superior performance and efficiency in a wide range of high-speed logic circuits. Its impressive MOSFET technology and low on-resistance make it an ideal choice for any high-speed logic application.
The specific data is subject to PDF, and the above content is for reference
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