FDW2503N

The FDW2503N is a two-channel metal oxide semiconductor field effect transistor (MOSFET) array, specifically designed for low-voltage, high-speed switching applications. This high-performance device is specifically designed to provide both excellent on-resistance and fast switching performance. It’s made using advanced MOSFET technology, allowing for very low on-resistance and fast switching times. Its low-impedance structure ensures good thermal resistance and improved operating temperature. It’s available in an 8-pin DIP or surface-mount configuration and is designed for use in a wide range of industrial and consumer applications.

The FDW2503N is designed to operate in low-voltage, high-speed switching applications. It consists of two N-channel MOSFETs with separate drain and source pins. These MOSFETs are coupled in parallel, with a common gate connection, making it ideal for use in bus switch applications. It features a low total gate charge, fast switching times, and a low leakage current, providing excellent on-resistance. The operating temperature range of the device is -55°C to 150°C. The current rating of the device is 500mA, and the voltage rating can be up to 150V.

The FDW2503N consists of two N-channel MOSFETs that are controlled by a common gate. This allows for excellent on-resistance and fast switching times. It has a low total gate charge and a low power dissipation. The gate source voltage can range from -4V to +12V, allowing for a wide range of applications. The device has a low leakage current and there is no significant switching transients.

The FDW2503N is a versatile device and can be used in a variety of applications. It can be used to switch high-speed signals, such as digital and PM (pulsewidth modulation) signals. It can also be used for level translation, power modulation, and power control applications. The MOSFETs in the device can also be used in an analog mode, switching a voltage or current in a linear fashion. This makes the device suitable for analog-to-digital and digital-to-analog converter circuits.

Overall, the FDW2503N is an excellent MOSFET array for low-voltage, high-speed switching applications. It has low on-resistance, fast switching times, low leakage current, and low power dissipation. Its versatile design makes it suitable for a variety of applications, such as signal switching, level translation, and power control. With its wide operating temperature and voltage ranges, the FDW2503N is a great choice for many applications.