Allicdata Part #: | FDW2521C-ND |
Manufacturer Part#: |
FDW2521C |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N/P-CH 20V 8-TSSOP |
More Detail: | Mosfet Array N and P-Channel 20V 5.5A, 3.8A 600mW ... |
DataSheet: | FDW2521C Datasheet/PDF |
Quantity: | 1599 |
Series: | PowerTrench® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N and P-Channel |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 5.5A, 3.8A |
Rds On (Max) @ Id, Vgs: | 21 mOhm @ 5.5A, 4.5V |
Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 17nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 1082pF @ 10V |
Power - Max: | 600mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-TSSOP (0.173", 4.40mm Width) |
Supplier Device Package: | 8-TSSOP |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The 2521C field effect transistor (FET) array is a semiconductor device used in many different applications. It is a four transistor array with each transistor having three distinct drain sources, allowing for a variety of different configurations. The 2521C is a monolithic integrated circuit (MIS) device, and has been used in an array of different applications, including switching and power management. The 2521C can operate over a wide range of temperatures and handle a wide range of electrical input voltages and output currents.
The 2521C FET array works in a similar way to other FET arrays. It uses two pins to switch current in one direction, and two other pins to switch in the opposite direction. This allows for more flexibility than other arrays, since it can be configured in a variety of ways. For example, it can be set up to switch current in both directions. This versatility makes the 2521C ideal for many different applications.
The 2521C is a versatile device and can be used in applications where a standard switch or power management circuit isn’t effective. It has been used in military and automotive applications, where its switching and power management abilities can be utilized. It has also been used in power converters and power supplies, where it can help reduce power consumption. As a result of its wide range of applications, the 2521C has become a popular choice for many different applications.
The working principle of the 2521C FET array is based on a field distribution across the gate oxide of the transistors. When a voltage is applied to the two gate pins, an electric field is created that is distributed across the gate oxide of each of the four transistors. This electric field causes the electrons to move from one transistor to the other, creating current flow from one device to another. Depending on the type of application, the current can be used to switch the current in one direction or the other, or it can be used to manage power consumption.
The 2521C FET array offers several advantages over other arrays, like higher current handling capability and lower power consumption. The 2521C is also easier to configure than other arrays, since it can be used in various configurations. Furthermore, it offers better temperature performance and can operate at a wider range of voltages and output currents. It is also a low cost solution compared to other arrays.
The 2521C FET array is an essential part of many electrical engineering designs and is used in a variety of applications. It can be used to switch current in both directions and to manage power consumption, making it a great choice for many different applications. As a result, the 2521C is a great solution for those who need a versatile and powerful solution for their design.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
FDW262P | ON Semicondu... | -- | 1000 | MOSFET P-CH 20V 4.5A 8-TS... |
FDW254P | ON Semicondu... | -- | 1000 | MOSFET P-CH 20V 9.2A 8-TS... |
FDW252P | ON Semicondu... | -- | 1000 | MOSFET P-CH 20V 8.8A 8-TS... |
FDW254PZ | ON Semicondu... | -- | 1000 | MOSFET P-CH 20V 9.2A 8-TS... |
FDW264P | ON Semicondu... | -- | 1000 | MOSFET P-CH 20V 9.7A 8-TS... |
FDW258P | ON Semicondu... | -- | 1000 | MOSFET P-CH 12V 9A 8-TSSO... |
FDW256P | ON Semicondu... | -- | 1000 | MOSFET P-CH 30V 8A 8-TSSO... |
FDW2520C | ON Semicondu... | -- | 1000 | MOSFET N/P-CH 20V 6A/4.4A... |
FDW2512NZ | ON Semicondu... | -- | 1000 | MOSFET 2N-CH 20V 6A 8-TSS... |
FDW2511NZ | ON Semicondu... | -- | 1000 | MOSFET 2N-CH 20V 7.1A 8TS... |
FDW2510NZ | ON Semicondu... | 0.0 $ | 1000 | MOSFET 2N-CH 20V 6.4A 8TS... |
FDW2501NZ | ON Semicondu... | -- | 1000 | MOSFET 2N-CH 20V 5.5A 8TS... |
FDW2516NZ | ON Semicondu... | -- | 1000 | MOSFET 2N-CH 20V 5.8A 8TS... |
FDW2601NZ | ON Semicondu... | -- | 1000 | MOSFET 2N-CH 30V 8.2A 8TS... |
FDW2501N | ON Semicondu... | -- | 1000 | MOSFET 2N-CH 20V 6A 8-TSS... |
FDW2503N | ON Semicondu... | -- | 1000 | MOSFET 2N-CH 20V 5.5A 8TS... |
FDW2504P | ON Semicondu... | -- | 1000 | MOSFET 2P-CH 20V 3.8A 8-T... |
FDW2508P | ON Semicondu... | -- | 1000 | MOSFET 2P-CH 12V 6A 8-TSS... |
FDW2507NZ | ON Semicondu... | -- | 1000 | MOSFET 2N-CH 20V 7.5A 8-T... |
FDW2507N | ON Semicondu... | -- | 1000 | MOSFET 2N-CH 20V 7.5A 8-T... |
FDW2521C | ON Semicondu... | -- | 1599 | MOSFET N/P-CH 20V 8-TSSOP... |
FDW2506P | ON Semicondu... | -- | 1000 | MOSFET 2P-CH 20V 5.3A 8-T... |
FDW2502P | ON Semicondu... | -- | 1000 | MOSFET 2P-CH 20V 4.4A 8-T... |
FDW2503NZ | ON Semicondu... | -- | 1000 | MOSFET 2N-CH 20V 5.5A 8TS... |
FDW2508PB | ON Semicondu... | -- | 1000 | MOSFET 2P-CH 12V 6A 8-TSS... |
MOSFET 2N-CH 30V 8AMosfet Array 2 N-Chan...
MOSFET 2N-CH 40V 6A 8PWRPAKMosfet Array ...
MOSFET 2P-CH 30V 5.8A 8SOICMosfet Array ...
MOSFET 2N-CH 80V 1.1A 8SOICMosfet Array ...
MOSFET 2N-CH 56LFPAKMosfet Array
MOSFET 2N-CH 30V 8SOICMosfet Array 2 N-C...