FQD4N20LTF

Vgs(th) (Max) @ Id:	2V @ 250µA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	D-Pak
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	2.5W (Ta), 30W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	310pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	5.2nC @ 5V
Series:	QFET®
Rds On (Max) @ Id, Vgs:	1.35 Ohm @ 1.6A, 10V
Drive Voltage (Max Rds On, Min Rds On):	5V, 10V
Current - Continuous Drain (Id) @ 25°C:	3.2A (Tc)
Drain to Source Voltage (Vdss):	200V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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FQD4N20LTF is a type of single N-channel MOSFET that is used to provide an electronic switch that can be used in a variety of applications. It is often used in areas where an electronic switch is needed that is reliable, fast, and has a very low power consumption. It is a commonly used device in areas such as low frequency switching, high speed switching, and high current switching. FQD4N20LTF is made up of a MOSFET channel that is formed by a metal gate electrode and a gate insulation layer. The gate insulation layer is an insulating layer of metal oxide, which helps to prevent a short circuit between the metal gate electrode and the source and drain of the device. This insulation layer also helps to isolate the metal gate from any other device components, such as resistors or capacitors. The source and drain of the FQD4N20LTF are connected to two separate terminals. The source and drain of the device allow current to flow between them. A voltage difference between the source and drain will cause a proportional amount of electrical current to flow through the device. The amount of current that flows through the device is determined by the voltage difference between the source and drain. Generally, the higher the voltage difference between the source and drain, the higher the current that flows through the device. When the device is turned on, a current will flow through the channel, which will cause the voltage across the drain to rise, and consequently the voltage across the source to decrease. This can cause an increase in the voltage that is applied to the gate, which will in turn lead to an increase in the current flowing through the device. When the device is turned off, the current through the device will decrease, and the voltage across the drain will decrease, and consequently the voltage across the source will increase. This will cause the voltage applied to the gate to decrease, and the current through the device will also decrease. The FQD4N20LTF is commonly used in applications where a reliable and fast switching element is needed. It is also very useful in areas where low power consumption is desired. Some of the most common applications for this type of MOSFET are in low frequency switching applications, such as motors and relays, high speed switching applications, such as switching power supplies, and high current switching applications, such as servers, computers, and communication systems. Overall, the FQD4N20LTF is an effective and reliable single N-channel MOSFET that can be used in a variety of applications. It is particularly useful in areas where reduced power consumption and reliable switching is desired. Since the device has a low gate drive current and a very low on-resistance, it is ideal for applications where fast switching is needed.

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