FQD4N25TM-WS Datasheet/PDFFQD4N25TM-WS is a single IGBT transistor that utilizes a trench gate structure with a higher cell density to reduce gate charge. This advanced structure design also reduces capacitive losses and provides superior switching speed compared to other devices. FQD4N25TM-WS is suitable for a wide range of applications including digital working, motor control, DC-DC converter, lighting switching and inverter systems. It is designed to operate with a drain current of 25 A and drain source voltage up to 600 V.
Working Principle
FQD4N25TM-WS works on a principle called Insulated Gate Bipolar Transistor (IGBT). It is a three-terminal power semiconductor device that combines the properties of field-effect transistor (FET) and bipolar junction transistor (BJT). IGBT has a heavily doped n-type channel insulated from the p-type body by a thin layer of oxide and gate terminal allows the voltage to control the conductivity of this channel.
The IGBT has a rectangular cross-section and uses a structure known as Trench Gate. It is combined with a metal-oxide semiconductor (MOS) gate structure, which ensures very good control of the junction regions and leakage current, as well as a very high switching speed. Trench Gate helps reduce the on-state conduction losses, which results in better performance of the FQD4N25TM-WS.
Application Fields
FQD4N25TM-WS is a power device that has a wide range of applications. It can be used in applications that require high efficiency, low power consumption and low noise. Such applications include power factor correction, DC-DC converters, motor control, and lighting switching. This IGBT can be used for Solar panel applications, Home UPS, switching and loads, Battery charger, Motor Soft Start, and Buck Converters. It also can be used in industrial and automotive applications.
In motor control systems, FQD4N25TM-WS is used to reduce the power consumption of the motor, improve the power factor, reduce the switching losses and noise. It can be used to achieve high-efficiency inverter systems in switching and lighting applications. In automotive applications, IGBT is used to reduce fuel consumption, emissions and improve the performance of the vehicle.
Advantages
One of the major advantages of FQD4N25TM-WS is its higher cell density that reduces gate charge. This improved structure allows for a high speed switching due to lower capacitive losses and higher switching frequency. The device has low on-state voltage drop and low power dissipation. It also has a very low gate current and is EMC compliant. It has good noise immunity and better temperature stability, which makes it ideal for applications in power electronics.
The FQD4N25TM-WS is a reliable and robust device that can be used in harsh environment conditions and can withstand high electrical and temperature stress. This makes it suitable for a wide range of applications in switching and loads, home UPS, Solar panel applications, motor soft start, and buck converters. This IGBT offers a cost-effective solution for power electronics and motor control systems.