FQD4P25TM-WS Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	5V @ 250µA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	D-Pak
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	2.5W (Ta), 45W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	420pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	14nC @ 10V
Series:	QFET®
Rds On (Max) @ Id, Vgs:	2.1 Ohm @ 1.55A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	3.1A (Tc)
Drain to Source Voltage (Vdss):	250V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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FQD4P25TM-WS Application Field and Working Principle

FQD4P25TM-WS, a power transistor in the field of FETs and MOSFETs, is a high current switching device with a single drain. It is designed to minimize the on-state resistance, while increasing the overall power efficiency in order to meet the requirements of high performance applications.FQD4P25TM-WS is a simple and reliable product that provides easy integration into a wide range of circuits and applications. It allows designers to easily connect and interconnect circuits, making it a great elementary building block for various functions.The FQD4P25TM-WS is an ideal device for power applications, allowing a superior level of heat dissipation, lower operating temperature and improved short-circuit protection. It also provides higher switching speed, thanks to its reduced internal gate capacitance. Furthermore, the FQD4P25TM-WS provides a high current rating and low voltage drop across the junction.The FQD4P25TM-WS is well-suited for use in high-voltage and high-current applications such as motor control, automotive and industrial power conversion and lighting. It is particularly useful for those applications requiring a low profile and a small form factor.FQD4P25TM-WS transistors employ a number of principles to guarantee a very high degree of performance. It features a low on-resistance and high avalanche energy, providing fast switching and superior performance.The FQD4P25TM-WS starts by employing a vertical structure composed of an n-channel metal oxide semiconductor field-effect transistor (MOSFET) for the drain, gate and source regions. It also contains a p-channel MOSFET, which is used to control the operation of the device.When the gate voltage (Vgs) is increased, the FQD4P25TM-WS amplifies the current flowing through the MOSFETs. In this process, a small amount of current is supplied through the P-channel MOSFET and its resulting inversion takes place in the source and drain regions; this is referred to as the inversion layer.This inversion layer can be considered a dedicated charge carrier layer, meaning that the current flowing through the device is used to induce a change in the electrical field within the transistor. This, in turn, results in the activation of the inversion layer and the subsequent reduction of the threshold voltage of the device.The source-drain voltage (Vds) controls the on-state resistance of the FQD4P25TM-WS. By applying a increased voltage to the drain terminal, the current can be further increased and the MOSFETs can behave like switches in order to control the current flow in any circuit.In summary, the FQD4P25TM-WS is a reliable, high performance, high voltage power transistor ideally suited for a variety of applications. It offers a low on-state resistance, high avalanche energy and fast switching, making it the ideal device for applications requiring a low profile, improved power efficiency and superior switching performance.

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