FQD4N20TM Discrete Semiconductor Products |
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Allicdata Part #: | FQD4N20TMFSTR-ND |
Manufacturer Part#: |
FQD4N20TM |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 200V 3A DPAK |
More Detail: | N-Channel 200V 3A (Tc) 2.5W (Ta), 30W (Tc) Surface... |
DataSheet: | FQD4N20TM Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-Pak |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta), 30W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 220pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 6.5nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 1.4 Ohm @ 1.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 3A (Tc) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The FQD4N20TM is a four terminal N-Channel depletion-mode power field effect transistor. It is designed specifically to be used as a variable resistance in the low to medium current range. It is available in a variety of packages including TO-3, TO-5 and TOP3. The FQD4N20TM is well suited for controlling loads such as motors, solenoids, relays and lamps in a variety of applications such as home appliances and lighting. Its drain to source saturation voltage is typically 0.4V when biased in the linear region and its total gate charge is as low as 2N11XC.
The FQD4N20TM operates in two distinct modes, the ohmic region and the saturation region. In ohmic region, the transistor behaves like a resistor with its output voltage being largely determined by the drain current. In saturation region, the drain-to-source voltage is constant, independent of the drain current. The modes are determined by the gate voltage, with lower gate voltage corresponding to the ohmic region, and higher gate voltage corresponding to the saturation region.
The working principle of the FQD4N20TM is based on the field effect transistor (FET) technology. When a voltage is applied to the gate of the device, it creates an electric field which attracts the electrons. This attracts the electrons away from the source terminal and towards the drain terminal. As a result, the resistance between the drain and source terminals drops and a current flows. The amount of current that flows is determined by the gate voltage, and the resistance between drain and source terminals is determined by the gate-to-source voltage.
The FQD4N20TM is an excellent choice for applications where a low cost and reliable device is needed to control the flow of current. It is also suitable for high-speed switching applications due to its fast response time. Its low total gate charge makes it an ideal choice for low power applications. Additionally, the FQD4N20TM has low gate leakage current, which aids in minimizing thermal issues.
The FQD4N20TM is primarily used in applications that require fast response times and constant, low gate voltages. For example, they can be used in power controllers, motor drivers, AC-DC converters, LED drivers, and home appliance controllers. Furthermore, they can also be used in voltage regulators, power amplifiers, and low noise amplifiers. With its wide array of features, the FQD4N20TM is an excellent choice for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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