Allicdata Part #: | FQD4N25TM-ND |
Manufacturer Part#: |
FQD4N25TM |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 250V 3A DPAK |
More Detail: | N-Channel 250V 3A (Tc) 2.5W (Ta), 37W (Tc) Surface... |
DataSheet: | FQD4N25TM Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-Pak |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta), 37W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 200pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 5.6nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 1.75 Ohm @ 1.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 3A (Tc) |
Drain to Source Voltage (Vdss): | 250V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The FQD4N25TM is a type of transistor belonging to the field effect type (FET) and the specific type is a single metal-oxide-semiconductor (MOSFET). FQD4N25TM is comprised of a gate, a source and a drain, which are three important components of a MOSFET. These components are all connected to the same body, which helps the transistor to control the flow of current through it. The main benefit of using FQD4N25TM is that it has a low voltage control input. This low voltage control input helps to reduce the power consumption and enhance the efficiency of the device.
The FQD4N25TM is primarily used as an switching element or a driver for circuits and other components. Whenever needed, it provides a fast response, low static power and good noise immunity. The FQD4N25TM transistor works on the principle that when gate voltage is greater than the source voltage, the drain current will flow in the circuit. If the gate voltage is lowered below the source voltage, the transistor will be switched off, thus blocking current flow through it.
The FQD4N25TM transistor also features an integrated protection diode to prevent it from damage due to over-voltage transients. This protection diode helps to reduce the power dissipation and temperature rise, thus improving the reliability of the device. Additionally, the FQD4N25TM is also optimized to handle high frequencies, which makes it suitable for high frequency switching applications. Thus, it is an excellent choice for designers who need to optimize their designs in terms of power, performance, reliability and cost.
The FQD4N25TM is a good choice for designers for power conversion and other power-related applications, thanks to its easily controllable input voltage and low on-state resistance. It is also a great option for high power applications where its low on-state resistance helps to reduce power losses. It is also suitable for audio amplifier circuits as its high frequency capabilities allow it to operate at a wide range of frequencies within a certain range. Additionally, the FQD4N25TM is a great option for automotive, communications and industrial control systems. In these applications, it is used to switch between different control signals the system needs to function.
The FQD4N25TM is a very versatile and reliable transistor, providing a good mix of performance and reliability. The low voltage control input and integrated protection diode make it a suitable choice for a variety of power management applications. Its ability to handle frequencies over a wide range makes it a great option for high frequency switching applications as well. Thus, it is an ideal choice for designers who need to find the right balance between performance and cost.
The specific data is subject to PDF, and the above content is for reference
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